TY - JOUR
T1 - Time-resolved investigation of nanosecond crystal growth in rapid-phase-change materials
T2 - Correlation with the recording speed of digital versatile disc media
AU - Fukuyama, Yoshimitsu
AU - Yasuda, Nobuhiro
AU - Kim, Jungeun
AU - Murayama, Haruno
AU - Tanaka, Yoshihito
AU - Kimura, Shigeru
AU - Kato, Kenichi
AU - Kohara, Shinji
AU - Moritomo, Yutaka
AU - Matsunaga, Toshiyuki
AU - Kojima, Rie
AU - Yamada, Noboru
AU - Tanaka, Hitoshi
AU - Ohshima, Takashi
AU - Takata, Masaki
PY - 2008/4/1
Y1 - 2008/4/1
N2 - The crystallization process in digital versatile disc (DVD) media was investigated using a time-resolved X-ray diffraction apparatus coupled with in situ photoreflectivity measurement. The time profiles of crystallization were found to be consistent with the changes in photoreflectivity. The phase changes were characterized by the start and end time; 90 ±1 and 273 ± 1 ns for Ge2Sb2Te5, and 85 ± 1 and 206 ± 1 ns for Ag3.5In3.5Sb75.0Te 17.7, respectively. The faster crystallization time in Ag 3.5In3.8Sb75.0Te17.7 is ascribed to its characteristic crystallization process; its X-ray diffraction profile shows a significant sharpening during the crystallization process, whereas the peak width of Ge2Sb2Te5 remained unchanged. The present findings suggest that crystal growth control is another key for designing faster phasechange materials.
AB - The crystallization process in digital versatile disc (DVD) media was investigated using a time-resolved X-ray diffraction apparatus coupled with in situ photoreflectivity measurement. The time profiles of crystallization were found to be consistent with the changes in photoreflectivity. The phase changes were characterized by the start and end time; 90 ±1 and 273 ± 1 ns for Ge2Sb2Te5, and 85 ± 1 and 206 ± 1 ns for Ag3.5In3.5Sb75.0Te 17.7, respectively. The faster crystallization time in Ag 3.5In3.8Sb75.0Te17.7 is ascribed to its characteristic crystallization process; its X-ray diffraction profile shows a significant sharpening during the crystallization process, whereas the peak width of Ge2Sb2Te5 remained unchanged. The present findings suggest that crystal growth control is another key for designing faster phasechange materials.
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U2 - 10.1143/APEX.1.045001
DO - 10.1143/APEX.1.045001
M3 - Article
AN - SCOPUS:57049143768
VL - 1
SP - 450011
EP - 450013
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 4
ER -