Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, Sg Fujita, S. Nakamura

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.

Original languageEnglish
Pages (from-to)1196-1198
Number of pages3
JournalJournal of Luminescence
Volume87
DOIs
Publication statusPublished - May 2000
EventInternational Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99) - Osaka, Jpn
Duration: Aug 23 1999Aug 27 1999

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Semiconductors
Photoluminescence spectroscopy
Genetic Recombination
Spectrum Analysis
spatial resolution
Semiconductor materials
photoluminescence
spectroscopy
wings
Equipment and Supplies
Temperature
spectral resolution
life (durability)
room temperature

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution. / Izumi, T.; Narukawa, Y.; Okamoto, K.; Kawakami, Y.; Fujita, Sg; Nakamura, S.

In: Journal of Luminescence, Vol. 87, 05.2000, p. 1196-1198.

Research output: Contribution to journalConference article

Izumi, T. ; Narukawa, Y. ; Okamoto, K. ; Kawakami, Y. ; Fujita, Sg ; Nakamura, S. / Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution. In: Journal of Luminescence. 2000 ; Vol. 87. pp. 1196-1198.
@article{eee8b5aba44b44d6830dc22265c3325a,
title = "Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution",
abstract = "Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.",
author = "T. Izumi and Y. Narukawa and K. Okamoto and Y. Kawakami and Sg Fujita and S. Nakamura",
year = "2000",
month = "5",
doi = "10.1016/S0022-2313(99)00594-3",
language = "English",
volume = "87",
pages = "1196--1198",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

TY - JOUR

T1 - Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

AU - Izumi, T.

AU - Narukawa, Y.

AU - Okamoto, K.

AU - Kawakami, Y.

AU - Fujita, Sg

AU - Nakamura, S.

PY - 2000/5

Y1 - 2000/5

N2 - Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.

AB - Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.

UR - http://www.scopus.com/inward/record.url?scp=0033746089&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033746089&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(99)00594-3

DO - 10.1016/S0022-2313(99)00594-3

M3 - Conference article

AN - SCOPUS:0033746089

VL - 87

SP - 1196

EP - 1198

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -