TY - JOUR
T1 - Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
AU - Izumi, T.
AU - Narukawa, Y.
AU - Okamoto, K.
AU - Kawakami, Y.
AU - Fujita, Sg
AU - Nakamura, S.
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan, Tateishi Science and Technology Foundation, Tokuyama Science and Technology Foundation and Hoso Bunka Foundation.
PY - 2000/5
Y1 - 2000/5
N2 - Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.
AB - Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.
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U2 - 10.1016/S0022-2313(99)00594-3
DO - 10.1016/S0022-2313(99)00594-3
M3 - Conference article
AN - SCOPUS:0033746089
SN - 0022-2313
VL - 87
SP - 1196
EP - 1198
JO - Journal of Luminescence
JF - Journal of Luminescence
T2 - International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99)
Y2 - 23 August 1999 through 27 August 1999
ER -