Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, Sg Fujita, S. Nakamura

Research output: Contribution to journalConference articlepeer-review

32 Citations (Scopus)


Recombination dynamics in GaN-based layers have been studied by means of photoluminescence spectroscopy having spectral and spatial resolution. It was found that PL lifetime (τPL) of the epitaxially laterally overgrown GaN (ELO-GaN), which consists of the regions with high (window) and low (wing) threading dislocation density (DD), was dominated by the nonradiative recombination process at room temperature (RT), and that the τPL measured at wing region (DD = 106 cm-2) was 86 ps which is slightly larger than the value (70 ps) at window region (DD = 108 cm-2). These indicate that threading dislocations limit hardly the emission efficiency even with these DD-levels, and that the device performance is mainly limited by other types of nonradiative recombination centers.

Original languageEnglish
Pages (from-to)1196-1198
Number of pages3
JournalJournal of Luminescence
Publication statusPublished - May 2000
Externally publishedYes
EventInternational Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99) - Osaka, Jpn
Duration: Aug 23 1999Aug 27 1999

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics


Dive into the research topics of 'Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution'. Together they form a unique fingerprint.

Cite this