Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

Fabi Zhang, Makoto Arita, Xu Wang, Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Teruaki Motooka, Qixin Guo

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm-3 while the conductivity from 10-4 to 1 S cm-1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.

Original languageEnglish
Article number102105
JournalApplied Physics Letters
Volume109
Issue number10
DOIs
Publication statusPublished - Sep 5 2016

Fingerprint

pulsed laser deposition
mass spectroscopy
electrical properties
microscopy
conductivity
electronics
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition. / Zhang, Fabi; Arita, Makoto; Wang, Xu; Chen, Zhengwei; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Motooka, Teruaki; Guo, Qixin.

In: Applied Physics Letters, Vol. 109, No. 10, 102105, 05.09.2016.

Research output: Contribution to journalArticle

Zhang, F, Arita, M, Wang, X, Chen, Z, Saito, K, Tanaka, T, Nishio, M, Motooka, T & Guo, Q 2016, 'Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition', Applied Physics Letters, vol. 109, no. 10, 102105. https://doi.org/10.1063/1.4962463
Zhang, Fabi ; Arita, Makoto ; Wang, Xu ; Chen, Zhengwei ; Saito, Katsuhiko ; Tanaka, Tooru ; Nishio, Mitsuhiro ; Motooka, Teruaki ; Guo, Qixin. / Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition. In: Applied Physics Letters. 2016 ; Vol. 109, No. 10.
@article{387090eae799434e82fb177cb5fa7bba,
title = "Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition",
abstract = "Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm-3 while the conductivity from 10-4 to 1 S cm-1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.",
author = "Fabi Zhang and Makoto Arita and Xu Wang and Zhengwei Chen and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Teruaki Motooka and Qixin Guo",
year = "2016",
month = "9",
day = "5",
doi = "10.1063/1.4962463",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition

AU - Zhang, Fabi

AU - Arita, Makoto

AU - Wang, Xu

AU - Chen, Zhengwei

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Motooka, Teruaki

AU - Guo, Qixin

PY - 2016/9/5

Y1 - 2016/9/5

N2 - Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm-3 while the conductivity from 10-4 to 1 S cm-1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.

AB - Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 1015 to 1020 cm-3 while the conductivity from 10-4 to 1 S cm-1 as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of β-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84987662355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987662355&partnerID=8YFLogxK

U2 - 10.1063/1.4962463

DO - 10.1063/1.4962463

M3 - Article

AN - SCOPUS:84987662355

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102105

ER -