Tracer diffusion of Cu in CVD β-SiC

A. Suino, Y. Yamazaki, H. Nitta, K. Miura, H. Seto, R. Kanno, Y. Iijima, H. Sato, S. Takeda, E. Toya, T. Ohtsuki

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by DCu* = 8 . 2- 0.5+ 0.5 × 1 0- 16 exp (- 41 ± 1 kJ mol- 1 / RT) m2 s- 1 . The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one-three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
Publication statusPublished - Feb 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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