Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by DCu* = 8 . 2- 0.5+ 0.5 × 1 0- 16 exp (- 41 ± 1 kJ mol- 1 / RT) m2 s- 1 . The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one-three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC.
|Number of pages||4|
|Journal||Journal of Physics and Chemistry of Solids|
|Publication status||Published - Feb 2008|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics