Tracer diffusion of Cu in CVD β-SiC

A. Suino, Yoshihiro Yamazaki, H. Nitta, K. Miura, H. Seto, R. Kanno, Y. Iijima, H. Sato, S. Takeda, E. Toya, T. Ohtsuki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by DCu* = 8 . 2- 0.5+ 0.5 × 1 0- 16 exp (- 41 ± 1 kJ mol- 1 / RT) m2 s- 1 . The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one-three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number2-3
DOIs
Publication statusPublished - Feb 1 2008

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tracers
Chemical vapor deposition
diffusion coefficient
vapor deposition
silicon carbides
interstitials
ion beams
activation energy
temperature dependence
Silicon carbide
Ion beams
Activation energy
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Suino, A., Yamazaki, Y., Nitta, H., Miura, K., Seto, H., Kanno, R., ... Ohtsuki, T. (2008). Tracer diffusion of Cu in CVD β-SiC. Journal of Physics and Chemistry of Solids, 69(2-3), 311-314. https://doi.org/10.1016/j.jpcs.2007.07.007

Tracer diffusion of Cu in CVD β-SiC. / Suino, A.; Yamazaki, Yoshihiro; Nitta, H.; Miura, K.; Seto, H.; Kanno, R.; Iijima, Y.; Sato, H.; Takeda, S.; Toya, E.; Ohtsuki, T.

In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 2-3, 01.02.2008, p. 311-314.

Research output: Contribution to journalArticle

Suino, A, Yamazaki, Y, Nitta, H, Miura, K, Seto, H, Kanno, R, Iijima, Y, Sato, H, Takeda, S, Toya, E & Ohtsuki, T 2008, 'Tracer diffusion of Cu in CVD β-SiC', Journal of Physics and Chemistry of Solids, vol. 69, no. 2-3, pp. 311-314. https://doi.org/10.1016/j.jpcs.2007.07.007
Suino, A. ; Yamazaki, Yoshihiro ; Nitta, H. ; Miura, K. ; Seto, H. ; Kanno, R. ; Iijima, Y. ; Sato, H. ; Takeda, S. ; Toya, E. ; Ohtsuki, T. / Tracer diffusion of Cu in CVD β-SiC. In: Journal of Physics and Chemistry of Solids. 2008 ; Vol. 69, No. 2-3. pp. 311-314.
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AU - Suino, A.

AU - Yamazaki, Yoshihiro

AU - Nitta, H.

AU - Miura, K.

AU - Seto, H.

AU - Kanno, R.

AU - Iijima, Y.

AU - Sato, H.

AU - Takeda, S.

AU - Toya, E.

AU - Ohtsuki, T.

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N2 - Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by DCu* = 8 . 2- 0.5+ 0.5 × 1 0- 16 exp (- 41 ± 1 kJ mol- 1 / RT) m2 s- 1 . The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one-three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC.

AB - Tracer diffusion coefficients of 67Cu and 64Cu in CVD β-Silicon carbide (β-SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by DCu* = 8 . 2- 0.5+ 0.5 × 1 0- 16 exp (- 41 ± 1 kJ mol- 1 / RT) m2 s- 1 . The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one-three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC.

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