Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate

Hisashi Murakami, Yoshihiro Kangawa, Yoshinao Kumagai, Akinori Koukitu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds