Transforming the short-term sensing stimuli to long-term e-skin memory

Fengyuan Liu, William Taube, Nivasan Yogeswaran, Duncan Gregory, Ravinder Dahiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.

Original languageEnglish
Title of host publicationIEEE SENSORS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509010127
DOIs
Publication statusPublished - Dec 21 2017
Event16th IEEE SENSORS Conference, ICSENS 2017 - Glasgow, United Kingdom
Duration: Oct 30 2017Nov 1 2017

Publication series

NameProceedings of IEEE Sensors
Volume2017-December
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Other

Other16th IEEE SENSORS Conference, ICSENS 2017
CountryUnited Kingdom
CityGlasgow
Period10/30/1711/1/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Liu, F., Taube, W., Yogeswaran, N., Gregory, D., & Dahiya, R. (2017). Transforming the short-term sensing stimuli to long-term e-skin memory. In IEEE SENSORS 2017 - Conference Proceedings (pp. 1-3). (Proceedings of IEEE Sensors; Vol. 2017-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSENS.2017.8234187