Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).
|Journal||Journal De Physique|
|Publication status||Published - 1994|
|Event||Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr|
Duration: Jan 22 1994 → Jan 25 1994
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)