Transient reflecting grating study of ion-implanted semiconductors

A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada

Research output: Contribution to journalConference article

Abstract

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

Original languageEnglish
Pages (from-to)C7-159-162
JournalJournal De Physique
Volume4
Issue number7
DOIs
Publication statusPublished - 1994
EventProceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
Duration: Jan 22 1994Jan 25 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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