Transient reflecting grating study of ion-implanted semiconductors

A. Harata; H. Nishimura; Q. Shen; T. Tanaka; T. Sawada

doi:10.1051/jp4:1994738

Transient reflecting grating study of ion-implanted semiconductors

A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada

Research output: Contribution to journal › Conference article › peer-review

Abstract

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 10¹¹-10¹⁷ atoms/cm²) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 10¹¹ atoms/cm²).

Original language	English
Pages (from-to)	C7-159-162
Journal	Journal De Physique
Volume	4
Issue number	7
DOIs	https://doi.org/10.1051/jp4:1994738
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr Duration: Jan 22 1994 → Jan 25 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1051/jp4:1994738

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title = "Transient reflecting grating study of ion-implanted semiconductors",

abstract = "Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).",

author = "A. Harata and H. Nishimura and Q. Shen and T. Tanaka and T. Sawada",

year = "1994",

doi = "10.1051/jp4:1994738",

language = "English",

volume = "4",

pages = "C7--159--162",

journal = "Journal De Physique",

issn = "0302-0738",

publisher = "Societe Francaise De Physique",

number = "7",

note = "Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena ; Conference date: 22-01-1994 Through 25-01-1994",

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TY - JOUR

T1 - Transient reflecting grating study of ion-implanted semiconductors

AU - Harata, A.

AU - Nishimura, H.

AU - Shen, Q.

AU - Tanaka, T.

AU - Sawada, T.

PY - 1994

Y1 - 1994

N2 - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

AB - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

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U2 - 10.1051/jp4:1994738

DO - 10.1051/jp4:1994738

M3 - Conference article

AN - SCOPUS:0028478554

SN - 0302-0738

VL - 4

SP - C7-159-162

JO - Journal De Physique

JF - Journal De Physique

IS - 7

T2 - Proceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena

Y2 - 22 January 1994 through 25 January 1994

ER -

Transient reflecting grating study of ion-implanted semiconductors

Abstract

All Science Journal Classification (ASJC) codes

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