Transient reflecting grating study of ion-implanted semiconductors

A. Harata, H. Nishimura, Q. Shen, T. Tanaka, T. Sawada

Research output: Contribution to journalConference article

Abstract

Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

Original languageEnglish
Pages (from-to)C7-159-162
JournalJournal De Physique
Volume4
Issue number7
Publication statusPublished - Jul 1 1994
EventProceedings of the 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena - Guadeloupe, Fr
Duration: Jan 22 1994Jan 25 1994

Fingerprint

Surface waves
gratings
Semiconductor materials
Atoms
acoustics
Ions
Acoustic wave velocity
Ion implantation
Surface treatment
Argon
dosage
ions
Anisotropy
Acoustics
Acoustic waves
atoms
ion implantation
implantation
argon
wafers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Harata, A., Nishimura, H., Shen, Q., Tanaka, T., & Sawada, T. (1994). Transient reflecting grating study of ion-implanted semiconductors. Journal De Physique, 4(7), C7-159-162.

Transient reflecting grating study of ion-implanted semiconductors. / Harata, A.; Nishimura, H.; Shen, Q.; Tanaka, T.; Sawada, T.

In: Journal De Physique, Vol. 4, No. 7, 01.07.1994, p. C7-159-162.

Research output: Contribution to journalConference article

Harata, A, Nishimura, H, Shen, Q, Tanaka, T & Sawada, T 1994, 'Transient reflecting grating study of ion-implanted semiconductors', Journal De Physique, vol. 4, no. 7, pp. C7-159-162.
Harata A, Nishimura H, Shen Q, Tanaka T, Sawada T. Transient reflecting grating study of ion-implanted semiconductors. Journal De Physique. 1994 Jul 1;4(7):C7-159-162.
Harata, A. ; Nishimura, H. ; Shen, Q. ; Tanaka, T. ; Sawada, T. / Transient reflecting grating study of ion-implanted semiconductors. In: Journal De Physique. 1994 ; Vol. 4, No. 7. pp. C7-159-162.
@article{55b98294d42b4a90bb90ce4ad7a5f353,
title = "Transient reflecting grating study of ion-implanted semiconductors",
abstract = "Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).",
author = "A. Harata and H. Nishimura and Q. Shen and T. Tanaka and T. Sawada",
year = "1994",
month = "7",
day = "1",
language = "English",
volume = "4",
pages = "C7--159--162",
journal = "Journal De Physique",
issn = "0302-0738",
publisher = "Societe Francaise De Physique",
number = "7",

}

TY - JOUR

T1 - Transient reflecting grating study of ion-implanted semiconductors

AU - Harata, A.

AU - Nishimura, H.

AU - Shen, Q.

AU - Tanaka, T.

AU - Sawada, T.

PY - 1994/7/1

Y1 - 1994/7/1

N2 - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

AB - Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 1011-1017 atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ion-implanted sample (dose, 1011 atoms/cm2).

UR - http://www.scopus.com/inward/record.url?scp=0028478554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028478554&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028478554

VL - 4

SP - C7-159-162

JO - Journal De Physique

JF - Journal De Physique

SN - 0302-0738

IS - 7

ER -