Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Masaki Tanaka, Grace S. Liu, Tomonobu Kishida, Kenji Higashida, Ian M. Robertson

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.

Original languageEnglish
Pages (from-to)2292-2296
Number of pages5
JournalJournal of Materials Research
Volume25
Issue number12
DOIs
Publication statusPublished - Dec 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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