Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

Masaru Itakura, Daigo Norizumi, Tomohisa Ohta, Yoshitsugu Tomokiyo, Noriyuki Kuwano

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16 Citations (Scopus)


The crystallographic orientation relationships and the formation process of β-FeSi2/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600°C consists of α- and β-FeSi2 particles. The crystallographic relationships obtained are: (112) α∥(111)Si and (101)β∥(111) Si or (110)β∥(111)Si. The grains of α- and β-FeSi2 grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi2 grains and some grains of β-FeSi2 with (100)β∥(001) Si [010]β∥[110]Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi2 and promote the formation of β-FeSi2 on/below the substrate surface.

Original languageEnglish
Pages (from-to)120-125
Number of pages6
JournalThin Solid Films
Issue number1
Publication statusPublished - Aug 2 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: Oct 8 2003Oct 13 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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