Transmission electron microscopic studies on crystallization of YBa 2Cu3O7-y films deposited by advanced TFA-MOD method

Junko Matsuda, Y. Tokunaga, K. Nakaoka, Ryo Teranishi, Y. Aoki, H. Fuji, A. Yajima, Y. Yamada, T. Izumi, Y. Shiohara

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

We have prepared Y123 quenched and fully crystallized films by the conventional and the advanced TFA-MOD processes. Then, we have investigated microstructures of the films by means of transmission electron microscopy, in order to understand the initial stage of the Y123 growth. As a result, it is found that Y-Ba-O-F grains firstly nucleate on LaAlO3 single crystals as well as on CeO2 buffered metal substrates both in the TFA-MOD processes. The Y-Ba-O-F is grown with epitaxially orientated relationship to the substrate. A BaCeO3 reaction product layer is formed due to Ba diffusion from Y123 to CeO2 mainly through the grain boundaries. At the crystallization temperature of 760 °C, the diffusion rate of Ba is slow. Therefore, it was found that the thickness of the BaCeO3 layer does not increase much further with increasing the holding time until about 1000 min.

Original languageEnglish
Pages (from-to)1051-1055
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume426-431
Issue numberII
DOIs
Publication statusPublished - Oct 7 2005
Externally publishedYes
EventProceedings of the 17th Internatioanl Symposium on Superconductivity (ISS 2004) Advances in Superconductivity -
Duration: Nov 23 2004Nov 25 2004

Fingerprint

Crystallization
crystallization
Electrons
Substrates
Reaction products
reaction products
Grain boundaries
electrons
grain boundaries
Metals
Single crystals
Transmission electron microscopy
transmission electron microscopy
microstructure
Microstructure
single crystals
metals
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Transmission electron microscopic studies on crystallization of YBa 2Cu3O7-y films deposited by advanced TFA-MOD method. / Matsuda, Junko; Tokunaga, Y.; Nakaoka, K.; Teranishi, Ryo; Aoki, Y.; Fuji, H.; Yajima, A.; Yamada, Y.; Izumi, T.; Shiohara, Y.

In: Physica C: Superconductivity and its applications, Vol. 426-431, No. II, 07.10.2005, p. 1051-1055.

Research output: Contribution to journalConference article

Matsuda, Junko ; Tokunaga, Y. ; Nakaoka, K. ; Teranishi, Ryo ; Aoki, Y. ; Fuji, H. ; Yajima, A. ; Yamada, Y. ; Izumi, T. ; Shiohara, Y. / Transmission electron microscopic studies on crystallization of YBa 2Cu3O7-y films deposited by advanced TFA-MOD method. In: Physica C: Superconductivity and its applications. 2005 ; Vol. 426-431, No. II. pp. 1051-1055.
@article{ffa30275a7b742ee8eea5854591f2456,
title = "Transmission electron microscopic studies on crystallization of YBa 2Cu3O7-y films deposited by advanced TFA-MOD method",
abstract = "We have prepared Y123 quenched and fully crystallized films by the conventional and the advanced TFA-MOD processes. Then, we have investigated microstructures of the films by means of transmission electron microscopy, in order to understand the initial stage of the Y123 growth. As a result, it is found that Y-Ba-O-F grains firstly nucleate on LaAlO3 single crystals as well as on CeO2 buffered metal substrates both in the TFA-MOD processes. The Y-Ba-O-F is grown with epitaxially orientated relationship to the substrate. A BaCeO3 reaction product layer is formed due to Ba diffusion from Y123 to CeO2 mainly through the grain boundaries. At the crystallization temperature of 760 °C, the diffusion rate of Ba is slow. Therefore, it was found that the thickness of the BaCeO3 layer does not increase much further with increasing the holding time until about 1000 min.",
author = "Junko Matsuda and Y. Tokunaga and K. Nakaoka and Ryo Teranishi and Y. Aoki and H. Fuji and A. Yajima and Y. Yamada and T. Izumi and Y. Shiohara",
year = "2005",
month = "10",
day = "7",
doi = "10.1016/j.physc.2005.01.086",
language = "English",
volume = "426-431",
pages = "1051--1055",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",
number = "II",

}

TY - JOUR

T1 - Transmission electron microscopic studies on crystallization of YBa 2Cu3O7-y films deposited by advanced TFA-MOD method

AU - Matsuda, Junko

AU - Tokunaga, Y.

AU - Nakaoka, K.

AU - Teranishi, Ryo

AU - Aoki, Y.

AU - Fuji, H.

AU - Yajima, A.

AU - Yamada, Y.

AU - Izumi, T.

AU - Shiohara, Y.

PY - 2005/10/7

Y1 - 2005/10/7

N2 - We have prepared Y123 quenched and fully crystallized films by the conventional and the advanced TFA-MOD processes. Then, we have investigated microstructures of the films by means of transmission electron microscopy, in order to understand the initial stage of the Y123 growth. As a result, it is found that Y-Ba-O-F grains firstly nucleate on LaAlO3 single crystals as well as on CeO2 buffered metal substrates both in the TFA-MOD processes. The Y-Ba-O-F is grown with epitaxially orientated relationship to the substrate. A BaCeO3 reaction product layer is formed due to Ba diffusion from Y123 to CeO2 mainly through the grain boundaries. At the crystallization temperature of 760 °C, the diffusion rate of Ba is slow. Therefore, it was found that the thickness of the BaCeO3 layer does not increase much further with increasing the holding time until about 1000 min.

AB - We have prepared Y123 quenched and fully crystallized films by the conventional and the advanced TFA-MOD processes. Then, we have investigated microstructures of the films by means of transmission electron microscopy, in order to understand the initial stage of the Y123 growth. As a result, it is found that Y-Ba-O-F grains firstly nucleate on LaAlO3 single crystals as well as on CeO2 buffered metal substrates both in the TFA-MOD processes. The Y-Ba-O-F is grown with epitaxially orientated relationship to the substrate. A BaCeO3 reaction product layer is formed due to Ba diffusion from Y123 to CeO2 mainly through the grain boundaries. At the crystallization temperature of 760 °C, the diffusion rate of Ba is slow. Therefore, it was found that the thickness of the BaCeO3 layer does not increase much further with increasing the holding time until about 1000 min.

UR - http://www.scopus.com/inward/record.url?scp=25644457505&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25644457505&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2005.01.086

DO - 10.1016/j.physc.2005.01.086

M3 - Conference article

AN - SCOPUS:25644457505

VL - 426-431

SP - 1051

EP - 1055

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - II

ER -