Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices

Chien Chung Shih; Cheng Yu Chung; Jeun Yan Lam; Hung Chin Wu; Yuma Morimitsu; Hisao Matsuno; Keiji Tanaka; Wen Chang Chen

doi:10.1039/c6cc07648c

Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices

Chien Chung Shih, Cheng Yu Chung, Jeun Yan Lam, Hung Chin Wu, Yuma Morimitsu, Hisao Matsuno, Keiji Tanaka, Wen Chang Chen

Applied Fine Chemistry

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices. The memory exhibited typical write-once-read-many (WORM)-type memory features with a high ON/OFF ratio (10⁴), long-term retention ability (10⁴ s) and excellent mechanical endurance.

Original language	English
Pages (from-to)	13463-13466
Number of pages	4
Journal	Chemical Communications
Volume	52
Issue number	92
DOIs	https://doi.org/10.1039/c6cc07648c
Publication status	Published - Jan 1 2016

All Science Journal Classification (ASJC) codes

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1039/c6cc07648c

Fingerprint Dive into the research topics of 'Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices'. Together they form a unique fingerprint.

Cite this

Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices. / Shih, Chien Chung; Chung, Cheng Yu; Lam, Jeun Yan; Wu, Hung Chin; Morimitsu, Yuma; Matsuno, Hisao ; Tanaka, Keiji; Chen, Wen Chang.

In: Chemical Communications, Vol. 52, No. 92, 01.01.2016, p. 13463-13466.

Research output: Contribution to journal › Article › peer-review

@article{b12d7b6d0ee9418183647dfbefa3bffc,

title = "Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices",

abstract = "Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices. The memory exhibited typical write-once-read-many (WORM)-type memory features with a high ON/OFF ratio (104), long-term retention ability (104 s) and excellent mechanical endurance.",

author = "Shih, {Chien Chung} and Chung, {Cheng Yu} and Lam, {Jeun Yan} and Wu, {Hung Chin} and Yuma Morimitsu and Hisao Matsuno and Keiji Tanaka and Chen, {Wen Chang}",

year = "2016",

month = jan,

day = "1",

doi = "10.1039/c6cc07648c",

language = "English",

volume = "52",

pages = "13463--13466",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "92",

}

TY - JOUR

T1 - Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices

AU - Shih, Chien Chung

AU - Chung, Cheng Yu

AU - Lam, Jeun Yan

AU - Wu, Hung Chin

AU - Morimitsu, Yuma

AU - Matsuno, Hisao

AU - Tanaka, Keiji

AU - Chen, Wen Chang

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices. The memory exhibited typical write-once-read-many (WORM)-type memory features with a high ON/OFF ratio (104), long-term retention ability (104 s) and excellent mechanical endurance.

AB - Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices. The memory exhibited typical write-once-read-many (WORM)-type memory features with a high ON/OFF ratio (104), long-term retention ability (104 s) and excellent mechanical endurance.

UR - http://www.scopus.com/inward/record.url?scp=84994804552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994804552&partnerID=8YFLogxK

U2 - 10.1039/c6cc07648c

DO - 10.1039/c6cc07648c

M3 - Article

C2 - 27790662

AN - SCOPUS:84994804552

VL - 52

SP - 13463

EP - 13466

JO - Chemical Communications

JF - Chemical Communications

SN - 1359-7345

IS - 92

ER -