Abstract
Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices. The memory exhibited typical write-once-read-many (WORM)-type memory features with a high ON/OFF ratio (104), long-term retention ability (104 s) and excellent mechanical endurance.
Original language | English |
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Pages (from-to) | 13463-13466 |
Number of pages | 4 |
Journal | Chemical Communications |
Volume | 52 |
Issue number | 92 |
DOIs | |
Publication status | Published - Jan 1 2016 |
All Science Journal Classification (ASJC) codes
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry