Transport and magnetic properties of Ce-doped LaMnO                         3                          thin films

Takeshi Yanagida; Teruo Kanki; Bertrand Vilquin; Hidekazu Tanaka; Tomoji Kawai

doi:10.1016/j.apsusc.2004.09.145

Transport and magnetic properties of Ce-doped LaMnO ₃ thin films

Takeshi Yanagida, Teruo Kanki, Bertrand Vilquin, Hidekazu Tanaka, Tomoji Kawai

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Ce-doped LaMnO ₃ epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T _c was found to be significantly influenced by the post-annealing conditions at the T _c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO ₃ films were identified to be holes from Hall effect measurements.

Original language	English
Pages (from-to)	355-358
Number of pages	4
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.09.145
Publication status	Published - May 15 2005
Externally published	Yes
Event	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: Jun 21 2004 → Jun 25 2004

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2004.09.145

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Transport and magnetic properties of Ce-doped LaMnO ₃ thin films . / Yanagida, Takeshi; Kanki, Teruo; Vilquin, Bertrand et al.

In: Applied Surface Science, Vol. 244, No. 1-4, 15.05.2005, p. 355-358.

Research output: Contribution to journal › Conference article › peer-review

@article{d2f87aad7e544febb3e12209112fbb12,

title = " Transport and magnetic properties of Ce-doped LaMnO 3 thin films ",

abstract = " Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements.",

author = "Takeshi Yanagida and Teruo Kanki and Bertrand Vilquin and Hidekazu Tanaka and Tomoji Kawai",

note = "Funding Information: The authors would like to thank the Ministry of Education, Culture, Sports, Science and Technology of Japan for funding and supporting this project through the Center of Excellence (COE) program. Three of the authors (T.Y., T.K. and B.V.) acknowledge the financial support from the Japan Society for the Promotion Science (JSPS).; 12th International Conference on Solid Films and Surfaces ; Conference date: 21-06-2004 Through 25-06-2004",

year = "2005",

month = may,

day = "15",

doi = "10.1016/j.apsusc.2004.09.145",

language = "English",

volume = "244",

pages = "355--358",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Transport and magnetic properties of Ce-doped LaMnO 3 thin films

AU - Yanagida, Takeshi

AU - Kanki, Teruo

AU - Vilquin, Bertrand

AU - Tanaka, Hidekazu

AU - Kawai, Tomoji

N1 - Funding Information: The authors would like to thank the Ministry of Education, Culture, Sports, Science and Technology of Japan for funding and supporting this project through the Center of Excellence (COE) program. Three of the authors (T.Y., T.K. and B.V.) acknowledge the financial support from the Japan Society for the Promotion Science (JSPS).

PY - 2005/5/15

Y1 - 2005/5/15

N2 - Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements.

AB - Ce-doped LaMnO 3 epitaxial thin films were fabricated by a pulsed laser deposition method in consideration of thermodynamics. Oxygen- or argon-atmosphere post-annealed films showed a metal-insulator transition and ferromagnetic property, and the transition temperature T c was found to be significantly influenced by the post-annealing conditions at the T c ranging from 200 to 300 K. Moreover, the majority carriers within Ce-doped LaMnO 3 films were identified to be holes from Hall effect measurements.

UR - http://www.scopus.com/inward/record.url?scp=15844410584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15844410584&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.09.145

DO - 10.1016/j.apsusc.2004.09.145

M3 - Conference article

AN - SCOPUS:15844410584

SN - 0169-4332

VL - 244

SP - 355

EP - 358

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - 12th International Conference on Solid Films and Surfaces

Y2 - 21 June 2004 through 25 June 2004

ER -

Transport and magnetic properties of Ce-doped LaMnO ₃ thin films

Abstract

All Science Journal Classification (ASJC) codes

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