Transport properties of EuNi2Ge2 under high pressure

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Abstract

Transverse magnetoresistance (MR) and Hall effect have been measured for EuNi2Ge2 single crystals under high pressures up to 2.0 GPa. The compound undergoes a valence transition from a nearly trivalent state to a divalent state with increasing temperature above 1.6 GPa. It was found that the transverse MR of EuNi2Ge2 is negative at low temperatures in the nearly trivalent state, although the compound is nonmagnetic. The origin of the negative MR is discussed. In the temperature dependence of the Hall resistivity ρH, large jumps associated with the valence transition were observed at the valence transition temperature. We also examined the field-induced valence transition by the MR and ρH measurements. A marked change in the Hall coefficient was observed at the valence transition field. Our analyses suggest that the ordinary Hall effect plays a dominant role in the changes in ρH at the valence transition.

Original languageEnglish
Article number034707
Journaljournal of the physical society of japan
Volume87
Issue number3
DOIs
Publication statusPublished - Jan 1 2018

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transport properties
valence
Hall effect
transition temperature
temperature dependence
electrical resistivity
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Transport properties of EuNi2Ge2 under high pressure. / Wada, Hirofumi; Goki, Yusuke; Mitsuda, Akihiro.

In: journal of the physical society of japan, Vol. 87, No. 3, 034707, 01.01.2018.

Research output: Contribution to journalArticle

@article{e92c3ec729694376a805b13603e35c94,
title = "Transport properties of EuNi2Ge2 under high pressure",
abstract = "Transverse magnetoresistance (MR) and Hall effect have been measured for EuNi2Ge2 single crystals under high pressures up to 2.0 GPa. The compound undergoes a valence transition from a nearly trivalent state to a divalent state with increasing temperature above 1.6 GPa. It was found that the transverse MR of EuNi2Ge2 is negative at low temperatures in the nearly trivalent state, although the compound is nonmagnetic. The origin of the negative MR is discussed. In the temperature dependence of the Hall resistivity ρH, large jumps associated with the valence transition were observed at the valence transition temperature. We also examined the field-induced valence transition by the MR and ρH measurements. A marked change in the Hall coefficient was observed at the valence transition field. Our analyses suggest that the ordinary Hall effect plays a dominant role in the changes in ρH at the valence transition.",
author = "Hirofumi Wada and Yusuke Goki and Akihiro Mitsuda",
year = "2018",
month = "1",
day = "1",
doi = "10.7566/JPSJ.87.034707",
language = "English",
volume = "87",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "3",

}

TY - JOUR

T1 - Transport properties of EuNi2Ge2 under high pressure

AU - Wada, Hirofumi

AU - Goki, Yusuke

AU - Mitsuda, Akihiro

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Transverse magnetoresistance (MR) and Hall effect have been measured for EuNi2Ge2 single crystals under high pressures up to 2.0 GPa. The compound undergoes a valence transition from a nearly trivalent state to a divalent state with increasing temperature above 1.6 GPa. It was found that the transverse MR of EuNi2Ge2 is negative at low temperatures in the nearly trivalent state, although the compound is nonmagnetic. The origin of the negative MR is discussed. In the temperature dependence of the Hall resistivity ρH, large jumps associated with the valence transition were observed at the valence transition temperature. We also examined the field-induced valence transition by the MR and ρH measurements. A marked change in the Hall coefficient was observed at the valence transition field. Our analyses suggest that the ordinary Hall effect plays a dominant role in the changes in ρH at the valence transition.

AB - Transverse magnetoresistance (MR) and Hall effect have been measured for EuNi2Ge2 single crystals under high pressures up to 2.0 GPa. The compound undergoes a valence transition from a nearly trivalent state to a divalent state with increasing temperature above 1.6 GPa. It was found that the transverse MR of EuNi2Ge2 is negative at low temperatures in the nearly trivalent state, although the compound is nonmagnetic. The origin of the negative MR is discussed. In the temperature dependence of the Hall resistivity ρH, large jumps associated with the valence transition were observed at the valence transition temperature. We also examined the field-induced valence transition by the MR and ρH measurements. A marked change in the Hall coefficient was observed at the valence transition field. Our analyses suggest that the ordinary Hall effect plays a dominant role in the changes in ρH at the valence transition.

UR - http://www.scopus.com/inward/record.url?scp=85042176596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042176596&partnerID=8YFLogxK

U2 - 10.7566/JPSJ.87.034707

DO - 10.7566/JPSJ.87.034707

M3 - Article

AN - SCOPUS:85042176596

VL - 87

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 3

M1 - 034707

ER -