TY - JOUR
T1 - Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation
AU - Perera, Rohana
AU - Ikeda, Akihiro
AU - Hattori, Reiji
AU - Kuroki, Yukinori
N1 - Funding Information:
One of the authors, R.P., gratefully acknowledges a post-graduate scholarship from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2003/5
Y1 - 2003/5
N2 - Thin films of silicon oxynitride (SiON) were grown on Si substrates by nitriding rapid thermally grown SiO2 layers in a microwave-excited nitrogen plasma and by subsequent re-oxidation. The enhanced leakage current in SiON at oxide fields 5-7 MV/cm is due to a trap assisted tunneling current. Trap assisted tunneling current analysis indicated a trap level of 1 eV below the conduction band edge, which is shallower than ∼ 2.5 eV level reported for nitrogen related traps in thermally nitrided SiO2. This shallower trap level suggests that its origin could be oxygen vacancies in the rapid thermal oxide, generated in the plasma nitridation.
AB - Thin films of silicon oxynitride (SiON) were grown on Si substrates by nitriding rapid thermally grown SiO2 layers in a microwave-excited nitrogen plasma and by subsequent re-oxidation. The enhanced leakage current in SiON at oxide fields 5-7 MV/cm is due to a trap assisted tunneling current. Trap assisted tunneling current analysis indicated a trap level of 1 eV below the conduction band edge, which is shallower than ∼ 2.5 eV level reported for nitrogen related traps in thermally nitrided SiO2. This shallower trap level suggests that its origin could be oxygen vacancies in the rapid thermal oxide, generated in the plasma nitridation.
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U2 - 10.1016/S0167-9317(02)01025-0
DO - 10.1016/S0167-9317(02)01025-0
M3 - Article
AN - SCOPUS:0038036682
SN - 0167-9317
VL - 65
SP - 357
EP - 370
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 4
ER -