T4 site adsorption of Tl atoms in a Si(111)-(1 × 1)-Tl structure, determined by low-energy electron diffraction analysis

Takayuki Noda, Seigi Mizuno, Jinwook Chung, Hiroshi Tochihara

Research output: Contribution to journalLetter

36 Citations (Scopus)

Abstract

A (1 × 1) structure formed on Si(111)7 × 7 by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the (1 × 1) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.

Original languageEnglish
Pages (from-to)L319-L321
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 B
Publication statusPublished - Mar 15 2003
Externally publishedYes

Fingerprint

Thallium
Low energy electron diffraction
thallium
electron diffraction
Adsorption
Atoms
adsorption
atoms
energy
Scanning tunneling microscopy
Tensors
scanning tunneling microscopy
periodic variations
tensors
Annealing
annealing
Metals
metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

T4 site adsorption of Tl atoms in a Si(111)-(1 × 1)-Tl structure, determined by low-energy electron diffraction analysis. / Noda, Takayuki; Mizuno, Seigi; Chung, Jinwook; Tochihara, Hiroshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 3 B, 15.03.2003, p. L319-L321.

Research output: Contribution to journalLetter

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T1 - T4 site adsorption of Tl atoms in a Si(111)-(1 × 1)-Tl structure, determined by low-energy electron diffraction analysis

AU - Noda, Takayuki

AU - Mizuno, Seigi

AU - Chung, Jinwook

AU - Tochihara, Hiroshi

PY - 2003/3/15

Y1 - 2003/3/15

N2 - A (1 × 1) structure formed on Si(111)7 × 7 by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the (1 × 1) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.

AB - A (1 × 1) structure formed on Si(111)7 × 7 by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the (1 × 1) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.

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