Tunable electronic properties and low thermal conductivity in synthetic colusites Cu26-xZnxV2M6S 32 (x ≤ 4, M = Ge, Sn)

Koichiro Suekuni, F. S. Kim, T. Takabatake

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We have first synthesized Cu26-xZnxV 2M6S32 (x ≤ 4, M = Ge, Sn) with the cubic colusite structure and measured the thermoelectric properties. For both M = Ge and Sn, the samples with x = 0 show moderately large thermopower of +27 μV/K at 300 K. The metallic conduction of p-type carriers and Pauli-paramagnetic behavior are consistent with the electron-deficient character expected from the formal charge Cu 26 1 + V 2 5 + M 6 4 + S 32 2 -. The substitution of Zn for Cu results in significant increases in both the electrical resistivity and thermopower. The resistivity of the samples with x = 4 displays a three-dimensional variable-range hopping behavior at low temperatures. These facts indicate that the doped electrons fill the unoccupied states in the valence band and thereby the Fermi level moves to the localized electronic states at the top of the band. The lattice thermal conductivity is as low as ∼1 W/Km at 300 K for all samples. The structural and thermoelectric properties of the colusites are discussed in comparison with those of doped tetrahedrite Cu12-xZnxSb4S 13.

Original languageEnglish
Article number063706
JournalJournal of Applied Physics
Volume116
Issue number6
DOIs
Publication statusPublished - Aug 14 2014
Externally publishedYes

Fingerprint

thermal conductivity
electronics
electrical resistivity
electrons
substitutes
valence
conduction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tunable electronic properties and low thermal conductivity in synthetic colusites Cu26-xZnxV2M6S 32 (x ≤ 4, M = Ge, Sn). / Suekuni, Koichiro; Kim, F. S.; Takabatake, T.

In: Journal of Applied Physics, Vol. 116, No. 6, 063706, 14.08.2014.

Research output: Contribution to journalArticle

@article{17faa0d2b79e4e138c8d246440ca805c,
title = "Tunable electronic properties and low thermal conductivity in synthetic colusites Cu26-xZnxV2M6S 32 (x ≤ 4, M = Ge, Sn)",
abstract = "We have first synthesized Cu26-xZnxV 2M6S32 (x ≤ 4, M = Ge, Sn) with the cubic colusite structure and measured the thermoelectric properties. For both M = Ge and Sn, the samples with x = 0 show moderately large thermopower of +27 μV/K at 300 K. The metallic conduction of p-type carriers and Pauli-paramagnetic behavior are consistent with the electron-deficient character expected from the formal charge Cu 26 1 + V 2 5 + M 6 4 + S 32 2 -. The substitution of Zn for Cu results in significant increases in both the electrical resistivity and thermopower. The resistivity of the samples with x = 4 displays a three-dimensional variable-range hopping behavior at low temperatures. These facts indicate that the doped electrons fill the unoccupied states in the valence band and thereby the Fermi level moves to the localized electronic states at the top of the band. The lattice thermal conductivity is as low as ∼1 W/Km at 300 K for all samples. The structural and thermoelectric properties of the colusites are discussed in comparison with those of doped tetrahedrite Cu12-xZnxSb4S 13.",
author = "Koichiro Suekuni and Kim, {F. S.} and T. Takabatake",
year = "2014",
month = "8",
day = "14",
doi = "10.1063/1.4892593",
language = "English",
volume = "116",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Tunable electronic properties and low thermal conductivity in synthetic colusites Cu26-xZnxV2M6S 32 (x ≤ 4, M = Ge, Sn)

AU - Suekuni, Koichiro

AU - Kim, F. S.

AU - Takabatake, T.

PY - 2014/8/14

Y1 - 2014/8/14

N2 - We have first synthesized Cu26-xZnxV 2M6S32 (x ≤ 4, M = Ge, Sn) with the cubic colusite structure and measured the thermoelectric properties. For both M = Ge and Sn, the samples with x = 0 show moderately large thermopower of +27 μV/K at 300 K. The metallic conduction of p-type carriers and Pauli-paramagnetic behavior are consistent with the electron-deficient character expected from the formal charge Cu 26 1 + V 2 5 + M 6 4 + S 32 2 -. The substitution of Zn for Cu results in significant increases in both the electrical resistivity and thermopower. The resistivity of the samples with x = 4 displays a three-dimensional variable-range hopping behavior at low temperatures. These facts indicate that the doped electrons fill the unoccupied states in the valence band and thereby the Fermi level moves to the localized electronic states at the top of the band. The lattice thermal conductivity is as low as ∼1 W/Km at 300 K for all samples. The structural and thermoelectric properties of the colusites are discussed in comparison with those of doped tetrahedrite Cu12-xZnxSb4S 13.

AB - We have first synthesized Cu26-xZnxV 2M6S32 (x ≤ 4, M = Ge, Sn) with the cubic colusite structure and measured the thermoelectric properties. For both M = Ge and Sn, the samples with x = 0 show moderately large thermopower of +27 μV/K at 300 K. The metallic conduction of p-type carriers and Pauli-paramagnetic behavior are consistent with the electron-deficient character expected from the formal charge Cu 26 1 + V 2 5 + M 6 4 + S 32 2 -. The substitution of Zn for Cu results in significant increases in both the electrical resistivity and thermopower. The resistivity of the samples with x = 4 displays a three-dimensional variable-range hopping behavior at low temperatures. These facts indicate that the doped electrons fill the unoccupied states in the valence band and thereby the Fermi level moves to the localized electronic states at the top of the band. The lattice thermal conductivity is as low as ∼1 W/Km at 300 K for all samples. The structural and thermoelectric properties of the colusites are discussed in comparison with those of doped tetrahedrite Cu12-xZnxSb4S 13.

UR - http://www.scopus.com/inward/record.url?scp=84906328243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906328243&partnerID=8YFLogxK

U2 - 10.1063/1.4892593

DO - 10.1063/1.4892593

M3 - Article

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063706

ER -