Abstract
<p>Large scale graphene production for device application preferably has to be done directly on substrates it will be use on (such as SiC). The strong coupling between graphene and substrate surface results in significant degrading of graphene's properties. One of the possible way to overcome this problem and acquire additional control over electronic properties of graphene is to modify the interface atomic structure between graphene and substrate. Here we would like to present our results on modelling different possible interface structures between graphene and SiC and their influence on graphene's electronic properties.</p>
Translated title of the contribution | Tuning graphene electronic properties with substrate interface structure |
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Original language | Japanese |
Pages (from-to) | 2447-2447 |
Number of pages | 1 |
Journal | 日本物理学会講演概要集 |
Volume | 71 |
Issue number | 0 |
DOIs | |
Publication status | Published - 2016 |