Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3

Kazumasa Yamada, M. Stopa, Y. Tokura, T. Hatano, T. Ota, T. Yamaguchi, S. Tarucha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report an asymmetric current blockade phenomenon which occurs in unique, hybrid vertical/lateral GaAs quantum dots and which modifies the nonlinear current-voltage characteristics. The data exhibit an enlargement of Coulomb blockade regions in the plane of source-drain and gate voltage, revealing suppression of elementary transitions between ground states or excited state of different electron number. This suppression indicates inaccessibility due to the eigenstate from the dot to 2DEG.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages785-786
Number of pages2
Volume772
DOIs
Publication statusPublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

tunnels
retarding
electric potential
eigenvectors
electrons
quantum dots
ground state
excitation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yamada, K., Stopa, M., Tokura, Y., Hatano, T., Ota, T., Yamaguchi, T., & Tarucha, S. (2005). Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Vol. 772, pp. 785-786) https://doi.org/10.1063/1.1994341

Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3. / Yamada, Kazumasa; Stopa, M.; Tokura, Y.; Hatano, T.; Ota, T.; Yamaguchi, T.; Tarucha, S.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. Vol. 772 2005. p. 785-786.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamada, K, Stopa, M, Tokura, Y, Hatano, T, Ota, T, Yamaguchi, T & Tarucha, S 2005, Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. vol. 772, pp. 785-786, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994341
Yamada K, Stopa M, Tokura Y, Hatano T, Ota T, Yamaguchi T et al. Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. Vol. 772. 2005. p. 785-786 https://doi.org/10.1063/1.1994341
Yamada, Kazumasa ; Stopa, M. ; Tokura, Y. ; Hatano, T. ; Ota, T. ; Yamaguchi, T. ; Tarucha, S. / Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. Vol. 772 2005. pp. 785-786
@inproceedings{1fd07b6b78b74e35846725c40a73ace3,
title = "Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3",
abstract = "We report an asymmetric current blockade phenomenon which occurs in unique, hybrid vertical/lateral GaAs quantum dots and which modifies the nonlinear current-voltage characteristics. The data exhibit an enlargement of Coulomb blockade regions in the plane of source-drain and gate voltage, revealing suppression of elementary transitions between ground states or excited state of different electron number. This suppression indicates inaccessibility due to the eigenstate from the dot to 2DEG.",
author = "Kazumasa Yamada and M. Stopa and Y. Tokura and T. Hatano and T. Ota and T. Yamaguchi and S. Tarucha",
year = "2005",
month = "6",
day = "30",
doi = "10.1063/1.1994341",
language = "English",
isbn = "0735402574",
volume = "772",
pages = "785--786",
booktitle = "PHYSICS OF SEMICONDUCTORS",

}

TY - GEN

T1 - Tunnel-coupling blockade in vertical/lateral hybrid dot to study many-body states for electron number N=1,2 and 3

AU - Yamada, Kazumasa

AU - Stopa, M.

AU - Tokura, Y.

AU - Hatano, T.

AU - Ota, T.

AU - Yamaguchi, T.

AU - Tarucha, S.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - We report an asymmetric current blockade phenomenon which occurs in unique, hybrid vertical/lateral GaAs quantum dots and which modifies the nonlinear current-voltage characteristics. The data exhibit an enlargement of Coulomb blockade regions in the plane of source-drain and gate voltage, revealing suppression of elementary transitions between ground states or excited state of different electron number. This suppression indicates inaccessibility due to the eigenstate from the dot to 2DEG.

AB - We report an asymmetric current blockade phenomenon which occurs in unique, hybrid vertical/lateral GaAs quantum dots and which modifies the nonlinear current-voltage characteristics. The data exhibit an enlargement of Coulomb blockade regions in the plane of source-drain and gate voltage, revealing suppression of elementary transitions between ground states or excited state of different electron number. This suppression indicates inaccessibility due to the eigenstate from the dot to 2DEG.

UR - http://www.scopus.com/inward/record.url?scp=33749499902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749499902&partnerID=8YFLogxK

U2 - 10.1063/1.1994341

DO - 10.1063/1.1994341

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

VL - 772

SP - 785

EP - 786

BT - PHYSICS OF SEMICONDUCTORS

ER -