Tunneling conduction in quasi-one-dimensional compound KFe(S1-xSex)2

Shido Nishioka, Hisao Kuriyaki, Kazuyoshi Hirakawa

Research output: Contribution to journalArticlepeer-review

Abstract

The nonmetallic behavior in the resistivity of KFeS2 is thought to be dominated by tunneling process between the metallic domains. Two theoretical models are examined: "activated tunneling" and "fluctuation induced tunneling" respectively developed by Abeles et al. and by Sheng. Both theories explain the temperature dependence of the resistivity in a wide temperature range. However, the dependence on the applied electric field is satisfactorily explained only by the latter model. Selenium substitution for sulfur sites brings effectively a reduction of height and width of the barrier potential at the domain boundary.

Original languageEnglish
Pages (from-to)150-155
Number of pages6
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume2
Issue number1
Publication statusPublished - Mar 1 1997

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

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