The nonmetallic behavior in the resistivity of KFeS2 is thought to be dominated by tunneling process between the metallic domains. Two theoretical models are examined: "activated tunneling" and "fluctuation induced tunneling" respectively developed by Abeles et al. and by Sheng. Both theories explain the temperature dependence of the resistivity in a wide temperature range. However, the dependence on the applied electric field is satisfactorily explained only by the latter model. Selenium substitution for sulfur sites brings effectively a reduction of height and width of the barrier potential at the domain boundary.
|Number of pages||6|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Mar 1 1997|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering