Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma

Li Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai

Research output: Contribution to journalArticle

Abstract

A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3 +, SiH2 +, SiH3 - and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.

Original languageEnglish
Article number025316
JournalAIP Advances
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 1 2018

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hollow
triodes
electron energy
simulation
electrodes
amorphous silicon
fluids
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma. / Su, Li Wen; Chen, Weiting; Uchino, Kiichiro; Kawai, Yoshinobu.

In: AIP Advances, Vol. 8, No. 2, 025316, 01.02.2018.

Research output: Contribution to journalArticle

Su, Li Wen ; Chen, Weiting ; Uchino, Kiichiro ; Kawai, Yoshinobu. / Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma. In: AIP Advances. 2018 ; Vol. 8, No. 2.
@article{449baf037ce5414e91f4fd125d6bff3f,
title = "Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma",
abstract = "A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3 +, SiH2 +, SiH3 - and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.",
author = "Su, {Li Wen} and Weiting Chen and Kiichiro Uchino and Yoshinobu Kawai",
year = "2018",
month = "2",
day = "1",
doi = "10.1063/1.5003911",
language = "English",
volume = "8",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma

AU - Su, Li Wen

AU - Chen, Weiting

AU - Uchino, Kiichiro

AU - Kawai, Yoshinobu

PY - 2018/2/1

Y1 - 2018/2/1

N2 - A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3 +, SiH2 +, SiH3 - and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.

AB - A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3 +, SiH2 +, SiH3 - and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.

UR - http://www.scopus.com/inward/record.url?scp=85042722788&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042722788&partnerID=8YFLogxK

U2 - 10.1063/1.5003911

DO - 10.1063/1.5003911

M3 - Article

AN - SCOPUS:85042722788

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 025316

ER -