Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma

Li Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai

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1 Citation (Scopus)

Abstract

A triode multi-hollow VHF SiH4/H2 plasma (60 MHz) was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3+, SiH2+, SiH3- and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.

Original languageEnglish
Article number025316
JournalAIP Advances
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 1 2018

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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