Two dimensional simulations of triode VHF SiH 4 plasma

Li Wen Su, Weiting Chen, Kiichiro Uchino, Yoshinobu Kawai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two-dimensional simulations of a triode VHF SiH 4 plasma (60 MHz) were performed using a fluid model, where the plasma was realized using multirod electrodes. Higher-order silanes that are responsible for the quality of amorphous silicon were included in the simulations. A typical VHF plasma with an electron density higher than 10 16 m %3 and an electron temperature lower than 3 eV was predicted between discharge electrodes while the electron density near the substrate was very low. The SiH 3 density was fairly uniform between discharge electrodes and did not decrease rapidly near the substrate, suggesting a high-speed deposition. Higher-order molecules and radicals that play an important role in dust formation had similar spatial profiles and their densities were five to 6 orders of magnitude lower than the SiH 3 density. We discussed the effect of the rate constant of reaction, SiH 3 + SiH 3 G SiH 2 + SiH 4 , on the SiH 3 density.

Original languageEnglish
Article number06JG01
JournalJapanese Journal of Applied Physics
Volume57
Issue number6
DOIs
Publication statusPublished - Jun 1 2018

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this