TY - JOUR
T1 -
Two dimensional simulations of triode VHF SiH
4
plasma
AU - Su, Li Wen
AU - Chen, Weiting
AU - Uchino, Kiichiro
AU - Kawai, Yoshinobu
PY - 2018/6/1
Y1 - 2018/6/1
N2 -
Two-dimensional simulations of a triode VHF SiH
4
plasma (60 MHz) were performed using a fluid model, where the plasma was realized using multirod electrodes. Higher-order silanes that are responsible for the quality of amorphous silicon were included in the simulations. A typical VHF plasma with an electron density higher than 10
16
m
%3
and an electron temperature lower than 3 eV was predicted between discharge electrodes while the electron density near the substrate was very low. The SiH
3
density was fairly uniform between discharge electrodes and did not decrease rapidly near the substrate, suggesting a high-speed deposition. Higher-order molecules and radicals that play an important role in dust formation had similar spatial profiles and their densities were five to 6 orders of magnitude lower than the SiH
3
density. We discussed the effect of the rate constant of reaction, SiH
3
+ SiH
3
G SiH
2
+ SiH
4
, on the SiH
3
density.
AB -
Two-dimensional simulations of a triode VHF SiH
4
plasma (60 MHz) were performed using a fluid model, where the plasma was realized using multirod electrodes. Higher-order silanes that are responsible for the quality of amorphous silicon were included in the simulations. A typical VHF plasma with an electron density higher than 10
16
m
%3
and an electron temperature lower than 3 eV was predicted between discharge electrodes while the electron density near the substrate was very low. The SiH
3
density was fairly uniform between discharge electrodes and did not decrease rapidly near the substrate, suggesting a high-speed deposition. Higher-order molecules and radicals that play an important role in dust formation had similar spatial profiles and their densities were five to 6 orders of magnitude lower than the SiH
3
density. We discussed the effect of the rate constant of reaction, SiH
3
+ SiH
3
G SiH
2
+ SiH
4
, on the SiH
3
density.
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U2 - 10.7567/JJAP.57.06JG01
DO - 10.7567/JJAP.57.06JG01
M3 - Article
AN - SCOPUS:85048078804
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06JG01
ER -