This paper reports the withstanding capability of unclamped inductive switching (UIS) of high voltage GaN-HEMTs as a function of the gate voltage in the off-state. One of the critical disadvantages of GaN-HEMTs is its lack of the UIS withstanding capability because of the non-removable structure of holes, which are generated by the avalanche breakdown. Therefore, a p-type GaN gate structure is attractive not only for normally-off operation but also for the UIS withstanding capability design from the viewpoint of hole-removal. This paper shows the results of the UIS test for GaN-HEMTs with the p-type gate structure. The UIS withstanding capability of GaN-HEMTs can be designed via the hole removal structure and the package thermal resistance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering