UIS withstanding capability and mechanism of high voltage GaN-HEMTs

Toshiyuki Naka, Wataru Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism of UIS for the GaN-HEMT was clarified.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages259-262
Number of pages4
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - Jul 25 2016
Externally publishedYes
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: Jun 12 2016Jun 16 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period6/12/166/16/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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