TY - JOUR
T1 - Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
AU - Li, Dapan
AU - Lan, Changyong
AU - Manikandan, Arumugam
AU - Yip, Sen Po
AU - Zhou, Ziyao
AU - Liang, Xiaoguang
AU - Shu, Lei
AU - Chueh, Yu Lun
AU - Han, Ning
AU - Ho, Johnny C.
N1 - Funding Information:
This research was financially supported by the General Research Fund (CityU 11204614) and the Theme-based Research Scheme (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, the National Natural Science Foundation of China (51672229 and 61605024), the Science Technology and Innovation Committee of Shenzhen Municipality (Grant JCYJ20170818095520778) and a grant from Shenzhen Research Institute, City University of Hong Kong.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In x Ga 1−x Sb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric In x Ga 1−x Sb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm 2 V −1 s −1 for In 0.09 Ga 0.91 Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In 0.28 Ga 0.72 Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W −1 and external quantum efficiency of 4.8 × 10 6 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.
AB - Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In x Ga 1−x Sb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric In x Ga 1−x Sb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm 2 V −1 s −1 for In 0.09 Ga 0.91 Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In 0.28 Ga 0.72 Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W −1 and external quantum efficiency of 4.8 × 10 6 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.
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U2 - 10.1038/s41467-019-09606-y
DO - 10.1038/s41467-019-09606-y
M3 - Article
C2 - 30971702
AN - SCOPUS:85064250047
VL - 10
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 1664
ER -