Ultra-fine metal gate operated graphene optical intensity modulator

Rai Kou, Yosuke Hori, Tai Tsuchizawa, Kaori Warabi, Yuzuki Kobayashi, Yuichi Harada, Hiroki Hibino, Tsuyoshi Yamamoto, Hirochika Nakajima, Koji Yamada

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al 2 O 3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.

Original languageEnglish
Article number251101
JournalApplied Physics Letters
Volume109
Issue number25
DOIs
Publication statusPublished - Dec 19 2016

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modulators
graphene
silicon
photonics
metals
waveguides
modulation
fabrication
electrodes
light modulation
converters
telecommunication
CMOS
light sources
platforms
simulation
vapor deposition
wire
output
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kou, R., Hori, Y., Tsuchizawa, T., Warabi, K., Kobayashi, Y., Harada, Y., ... Yamada, K. (2016). Ultra-fine metal gate operated graphene optical intensity modulator. Applied Physics Letters, 109(25), [251101]. https://doi.org/10.1063/1.4972306

Ultra-fine metal gate operated graphene optical intensity modulator. / Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji.

In: Applied Physics Letters, Vol. 109, No. 25, 251101, 19.12.2016.

Research output: Contribution to journalArticle

Kou, R, Hori, Y, Tsuchizawa, T, Warabi, K, Kobayashi, Y, Harada, Y, Hibino, H, Yamamoto, T, Nakajima, H & Yamada, K 2016, 'Ultra-fine metal gate operated graphene optical intensity modulator' Applied Physics Letters, vol. 109, no. 25, 251101. https://doi.org/10.1063/1.4972306
Kou R, Hori Y, Tsuchizawa T, Warabi K, Kobayashi Y, Harada Y et al. Ultra-fine metal gate operated graphene optical intensity modulator. Applied Physics Letters. 2016 Dec 19;109(25). 251101. https://doi.org/10.1063/1.4972306
Kou, Rai ; Hori, Yosuke ; Tsuchizawa, Tai ; Warabi, Kaori ; Kobayashi, Yuzuki ; Harada, Yuichi ; Hibino, Hiroki ; Yamamoto, Tsuyoshi ; Nakajima, Hirochika ; Yamada, Koji. / Ultra-fine metal gate operated graphene optical intensity modulator. In: Applied Physics Letters. 2016 ; Vol. 109, No. 25.
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