Abstract
The increase in the ultra-high efficiency field electron emission from the defect-control polyimide tunnel cathode using a dc-voltage 'forming' method was described. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition were important to obtain ultra-high electron emission efficiency from the cathode. The dc-voltage of 50 V was applied between the cathode and the gate electrode until an anode current can be obtained. The results indicates that hot electrons generated in the ion modified polyimide film emit the vacuum with less scattering.
| Original language | English |
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| Title of host publication | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 |
| Editors | A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong |
| Pages | 104-105 |
| Number of pages | 2 |
| Publication status | Published - 2004 |
| Event | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States Duration: Jul 11 2004 → Jul 16 2004 |
Other
| Other | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 |
|---|---|
| Country/Territory | United States |
| City | Cambridge, MA |
| Period | 7/11/04 → 7/16/04 |
All Science Journal Classification (ASJC) codes
- Engineering(all)