To produce high-performance devices on flexible plastic substrates, it is essential to form Ge-based group IV semiconductors on insulating substrates at low temperatures (≤250°C). We have developed a technique for solid phase crystallization of amorphous GeSn (≤220°C) enhanced by Sn doping, and combined with a seeding technique induced by Sn melting (∼250°C). This combination produces lateral crystallization of amorphous GeSn from seed arrays with no incubation time. As a result, extremely high growth velocities at 220°C, depending on Sn concentration, e.g., 0.13μm/h (14% Sn) and 1100μm/h (23% Sn), are achieved. These velocities are 104-108 times higher than that of pure Ge. This technique enables growth of crystalline GeSn island arrays (diameters: 50-150μm) at low temperatures (≤250°C) at controlled positions on insulating substrates.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)