Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

R. Matsumura, K. Moto, Y. Kai, T. Sadoh, H. Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
EditorsS. Kar, D. Misra, K. Kita, D. Landheer
PublisherElectrochemical Society Inc.
Pages301-304
Number of pages4
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2015
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Publication series

NameECS Transactions
Number5
Volume69
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Matsumura, R., Moto, K., Kai, Y., Sadoh, T., Ikenoue, H., & Miyao, M. (2015). Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. In S. Kar, D. Misra, K. Kita, & D. Landheer (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 (5 ed., pp. 301-304). (ECS Transactions; Vol. 69, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/06905.0301ecst