Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

R. Matsumura, K. Moto, Y. Kai, Taizoh Sadoh, Hiroshi Ikenoue, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Solid-phase crystallization (SPC) of amorphous-GeSn (a-GeSn) films on insulating substrates has been developed combining with laser-anneal seeding, to realize next generation thin-film devices. By this technique, we have realized crystallization of GeSn (>10%) at low temperatures (∼180°C), which is applicable to flexible thin-film devices on low cost plastic substrates with low softening temperatures (∼200°C). In addition, the starting point of crystallization can be controlled by seeding, which is a big advantage in circuit designing.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 13
EditorsS. Kar, D. Misra, K. Kita, D. Landheer
PublisherElectrochemical Society Inc.
Pages301-304
Number of pages4
Volume69
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2015
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Thin film devices
Crystallization
Lasers
Amorphous films
Substrates
Temperature
Plastics
Networks (circuits)
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Matsumura, R., Moto, K., Kai, Y., Sadoh, T., Ikenoue, H., & Miyao, M. (2015). Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. In S. Kar, D. Misra, K. Kita, & D. Landheer (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 (5 ed., Vol. 69, pp. 301-304). Electrochemical Society Inc.. https://doi.org/10.1149/06905.0301ecst

Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. / Matsumura, R.; Moto, K.; Kai, Y.; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, M.

Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. ed. / S. Kar; D. Misra; K. Kita; D. Landheer. Vol. 69 5. ed. Electrochemical Society Inc., 2015. p. 301-304.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsumura, R, Moto, K, Kai, Y, Sadoh, T, Ikenoue, H & Miyao, M 2015, Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. in S Kar, D Misra, K Kita & D Landheer (eds), Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. 5 edn, vol. 69, Electrochemical Society Inc., pp. 301-304, Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 13 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06905.0301ecst
Matsumura R, Moto K, Kai Y, Sadoh T, Ikenoue H, Miyao M. Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. In Kar S, Misra D, Kita K, Landheer D, editors, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. 5 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 301-304 https://doi.org/10.1149/06905.0301ecst
Matsumura, R. ; Moto, K. ; Kai, Y. ; Sadoh, Taizoh ; Ikenoue, Hiroshi ; Miyao, M. / Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding. Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. editor / S. Kar ; D. Misra ; K. Kita ; D. Landheer. Vol. 69 5. ed. Electrochemical Society Inc., 2015. pp. 301-304
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