Ultra-low temperature Si TFTs with metal source-drain using ELA for flexible sheet

Taisel Harada, Futa Gakiya, Yuya Lshiki, Tatsuya Okada, Takash I. Noguchi, Kanj I. Noda, Akira Suwa, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

n-type top-gate TFT was fabricated using ELA without adopting ion-implantation by adopting ultra-low temperature process below 200 'C. In place of impurity doping, Ti of metal was used for source-drain region. As a result of hydrogen annealing at 200'C after forming AI electrodes, drastic improvement of n-type TFT has been realized.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages955-956
Number of pages2
ISBN (Electronic)9781510845510
Publication statusPublished - Jan 1 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: Dec 7 2016Dec 9 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period12/7/1612/9/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Harada, T., Gakiya, F., Lshiki, Y., Okada, T., Noguchi, T. I., Noda, K. I., Suwa, A., & Ikenoue, H. (2016). Ultra-low temperature Si TFTs with metal source-drain using ELA for flexible sheet. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 955-956). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 2). Society for Information Display.