Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18μm CMOS process

A. I.A. Galal, R. K. Pokharel, Haruichi Kanay, Keiji Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)

Abstract

A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3-10.6 GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise figure (NF). This work is designed and fabricated in TSMC 0.18μm CMOS process. The proposed UWB LNA achieves a measured flat gain 15 dB and has a noise figure of 4 dB over the entire band while consuming 21.5 mW of power. The measured third order intercept point IIP3 is 2.5 dBm.

Original languageEnglish
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages33-36
Number of pages4
DOIs
Publication statusPublished - Apr 23 2010
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: Jan 11 2010Jan 13 2010

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period1/11/101/13/10

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18μm CMOS process'. Together they form a unique fingerprint.

  • Cite this

    Galal, A. I. A., Pokharel, R. K., Kanay, H., & Yoshida, K. (2010). Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18μm CMOS process. In 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers (pp. 33-36). [5422832] (2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers). https://doi.org/10.1109/SMIC.2010.5422832