TY - JOUR
T1 - Ultraclean suspended monolayer graphene achieved insitu current annealing
AU - Wang, Haidong
AU - Zhang, Xing
AU - Takamatsu, Hiroshi
N1 - Funding Information:
The work were supported by the JSPS KAKENHI Grant-in-Aid for Young Scientists B No. 15K17987 and National Natural Science Foundation of China Grant Nos. 51636002, 51327001, 51136001 and 51356001.
Publisher Copyright:
� 2016 IOP Publishing Ltd.
PY - 2017/1/27
Y1 - 2017/1/27
N2 - Ultraclean graphene is essential for studying its intrinsic transport properties or fabricating high-performance electronic devices. Unfortunately, the contamination on graphene is unavoidable after microelectromechanical system processing. Here, we report an in situ current-annealing method for achieving ultraclean suspended monolayer graphene. The charge mobility of cleaned graphene reached a surprising 3.8 �105 cm2 V-1 s-1, one of the highest values ever reported. For the first time, the process of current annealing was recorded under a high-resolution electron scanning microscope. It was demonstrated that temperature was the only dominant factor of the current-annealing process. Meanwhile, the mobility of suspended graphene was found to be highly sensitive to structural defects. The mobility decreased by a factor of over 100 after ion irradiation on graphene. The results revealed the underlying mechanism of current annealing on graphene and provided an effective means of preparing ultraclean graphene membranes.
AB - Ultraclean graphene is essential for studying its intrinsic transport properties or fabricating high-performance electronic devices. Unfortunately, the contamination on graphene is unavoidable after microelectromechanical system processing. Here, we report an in situ current-annealing method for achieving ultraclean suspended monolayer graphene. The charge mobility of cleaned graphene reached a surprising 3.8 �105 cm2 V-1 s-1, one of the highest values ever reported. For the first time, the process of current annealing was recorded under a high-resolution electron scanning microscope. It was demonstrated that temperature was the only dominant factor of the current-annealing process. Meanwhile, the mobility of suspended graphene was found to be highly sensitive to structural defects. The mobility decreased by a factor of over 100 after ion irradiation on graphene. The results revealed the underlying mechanism of current annealing on graphene and provided an effective means of preparing ultraclean graphene membranes.
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U2 - 10.1088/1361-6528/28/4/045706
DO - 10.1088/1361-6528/28/4/045706
M3 - Article
C2 - 27991436
AN - SCOPUS:85007451768
VL - 28
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 4
M1 - 045706
ER -