TY - JOUR
T1 - Ultracompact 60-GHz CMOS BPF Employing Broadside-Coupled Open-Loop Resonators
AU - El-Hameed, Anwer S.Abd
AU - Barakat, Adel
AU - Abdel-Rahman, Adel B.
AU - Allam, Ahmed
AU - Pokharel, Ramesh K.
N1 - Funding Information:
Manuscript received May 25, 2017; accepted July 12, 2017. Date of publication August 15, 2017; date of current version September 1, 2017. This work was supported in part by a Grant-in-Aid for Scientific Research (C) under Grant 16K06301, in part by the Egyptian Ministry of Higher Education, in part by Egypt-Japan University of Science and Technology, Egypt, and in part by VLSI Design and Education Center, The University of Tokyo in collaboration with Cadence and Keysight Corporations. (Corresponding author: Anwer S. Abd El-Hameed.) A. S. Abd El-Hameed is with the Egypt-Japan University of Science and Technology, Alexandria 21934, Egypt, and also with the Electronics Research Institute, Giza 12622, Egypt (e-mail: anwer.sayed@ejust.edu.eg).
Publisher Copyright:
© 2001-2012 IEEE.
PY - 2017/9
Y1 - 2017/9
N2 - This letter presents a 60-GHz ultracompact on-chip bandpass filter (BPF). The designed filter is based on a unique structure, which consists of two overlapped broadside-coupled open-loop resonators, achieving a high level of miniaturization. Moreover, each resonator is loaded by a metal-insulator-metal capacitor to get further miniaturization. Defected ground structure pattern is constructed under the filter structure to enhance the insertion loss (IL). This BPF is designed and fabricated using a standard 0.18- μ complementary metal-oxide-semiconductor technology for millimeter-wave applications. The fabricated BPF chip size is 240 × 225-μ 2 including pads. The measured results agree well with the simulation ones and show that the BPF has an IL of 3.3 dB at 59.5-GHz center frequency, and a bandwidth of 12.9 GHz.
AB - This letter presents a 60-GHz ultracompact on-chip bandpass filter (BPF). The designed filter is based on a unique structure, which consists of two overlapped broadside-coupled open-loop resonators, achieving a high level of miniaturization. Moreover, each resonator is loaded by a metal-insulator-metal capacitor to get further miniaturization. Defected ground structure pattern is constructed under the filter structure to enhance the insertion loss (IL). This BPF is designed and fabricated using a standard 0.18- μ complementary metal-oxide-semiconductor technology for millimeter-wave applications. The fabricated BPF chip size is 240 × 225-μ 2 including pads. The measured results agree well with the simulation ones and show that the BPF has an IL of 3.3 dB at 59.5-GHz center frequency, and a bandwidth of 12.9 GHz.
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U2 - 10.1109/LMWC.2017.2734771
DO - 10.1109/LMWC.2017.2734771
M3 - Article
AN - SCOPUS:85028455308
VL - 27
SP - 818
EP - 820
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 9
M1 - 8010799
ER -