Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)

Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).

Original languageEnglish
Pages (from-to)1954-1960
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
Publication statusPublished - Aug 18 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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