Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)

Johji Nishio, Chiharu Ota, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).

Original languageEnglish
Pages (from-to)1954-1960
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
Publication statusPublished - Aug 18 2008
Externally publishedYes

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Schottky barrier diodes
Electric breakdown
Simulators
Fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs). / Nishio, Johji; Ota, Chiharu; Hatakeyama, Tetsuo; Shinohe, Takashi; Kojima, Kazutoshi; Nishizawa, Shinichi; Ohashi, Hiromichi.

In: IEEE Transactions on Electron Devices, Vol. 55, No. 8, 18.08.2008, p. 1954-1960.

Research output: Contribution to journalArticle

Nishio, J, Ota, C, Hatakeyama, T, Shinohe, T, Kojima, K, Nishizawa, S & Ohashi, H 2008, 'Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)', IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1954-1960. https://doi.org/10.1109/TED.2008.926666
Nishio, Johji ; Ota, Chiharu ; Hatakeyama, Tetsuo ; Shinohe, Takashi ; Kojima, Kazutoshi ; Nishizawa, Shinichi ; Ohashi, Hiromichi. / Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs). In: IEEE Transactions on Electron Devices. 2008 ; Vol. 55, No. 8. pp. 1954-1960.
@article{f72c8cf3e9184acaa5bfdcacd7eeab3f,
title = "Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)",
abstract = "We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).",
author = "Johji Nishio and Chiharu Ota and Tetsuo Hatakeyama and Takashi Shinohe and Kazutoshi Kojima and Shinichi Nishizawa and Hiromichi Ohashi",
year = "2008",
month = "8",
day = "18",
doi = "10.1109/TED.2008.926666",
language = "English",
volume = "55",
pages = "1954--1960",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)

AU - Nishio, Johji

AU - Ota, Chiharu

AU - Hatakeyama, Tetsuo

AU - Shinohe, Takashi

AU - Kojima, Kazutoshi

AU - Nishizawa, Shinichi

AU - Ohashi, Hiromichi

PY - 2008/8/18

Y1 - 2008/8/18

N2 - We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).

AB - We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mΩ · cm2. These values correspond to the world record of 11.3 GW/cm2 for Baliga's figure-of-merit (BFOM} = 4Vbd2/Ron-sp).

UR - http://www.scopus.com/inward/record.url?scp=49249094343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49249094343&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.926666

DO - 10.1109/TED.2008.926666

M3 - Article

AN - SCOPUS:49249094343

VL - 55

SP - 1954

EP - 1960

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -