Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

T. Sadoh; J. H. Park; M. Kurosawa; M. Miyao

doi:10.1109/ISTDM.2014.6874633

Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	47-48
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874633
Publication status	Published - Jan 1 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: Jun 2 2014 → Jun 4 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	6/2/14 → 6/4/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874633

Cite this

Sadoh, T., Park, J. H., Kurosawa, M., & Miyao, M. (2014). Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 47-48). [6874633] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874633

Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics. / Sadoh, T.; Park, J. H.; Kurosawa, M. et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 47-48 6874633 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadoh, T, Park, JH, Kurosawa, M & Miyao, M 2014, Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874633, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 47-48, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874633

Sadoh T, Park JH, Kurosawa M, Miyao M. Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 47-48. 6874633. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874633

@inproceedings{6c79b96c1c56406aa3170ef41e2d19b2,

title = "Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics",

abstract = "Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.",

author = "T. Sadoh and Park, {J. H.} and M. Kurosawa and M. Miyao",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/ISTDM.2014.6874633",

language = "English",

isbn = "9781479954285",

series = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

publisher = "IEEE Computer Society",

pages = "47--48",

booktitle = "2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014",

address = "United States",

note = "7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

}

TY - GEN

T1 - Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

AU - Sadoh, T.

AU - Park, J. H.

AU - Kurosawa, M.

AU - Miyao, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.

AB - Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.

UR - http://www.scopus.com/inward/record.url?scp=84906663942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906663942&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2014.6874633

DO - 10.1109/ISTDM.2014.6874633

M3 - Conference contribution

AN - SCOPUS:84906663942

SN - 9781479954285

T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

SP - 47

EP - 48

BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

PB - IEEE Computer Society

T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Y2 - 2 June 2014 through 4 June 2014

ER -

Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

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