Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Development of a low-temperature (≤250°C) formation technique of orientation-controlled large-grain (<10 μm) SiGe on insulator is essential to realize flexible electronics, where various advanced devices are integrated on flexible plastic substrates (softening temperature: ~300°C). This is because SiGe provides higher carrier mobility and superior optical properties compared with Si, as well as epitaxial template of various functional materials. In line with this, we have been developing metal-induced crystallization of SiGe. This achieves selectively (100)- or (111)-oriented large-grain (≥20 μm) SiGe at low temperatures (~250°C) [1-4]. Present paper reviews our recent progress in this novel growth technique.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages47-48
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - Jan 1 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Sadoh, T., Park, J. H., Kurosawa, M., & Miyao, M. (2014). Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 47-48). [6874633] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874633