Ultrasonic bonding of cone bump for integration of large-scale integrated circuits in flexible electronics

Takanori Shuto, Keiichiro Iwanabe, Kazuhiro Noda, Seiya Nakai, Tanemasa Asano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper reports that room-temperature bonding of LSI chips to metalization on a plastic film made of poly(ethylene naphthalate) (PEN) can be realized by ultrasonic bonding of a cone-shaped microbump made of Au. A 20-m-pitch area array of cone-shaped Au microbumps was fabricated on a Si wafer by photolithography and electroplating. The counter electrode on the PEN film was composed of a Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by electroless plating on Al interconnection. Bonding of 8,800 bump connections with 83.4m/bump has been achieved at room temperature.

Original languageEnglish
Article number05DB10
JournalJapanese Journal of Applied Physics
Volume52
Issue number5 PART 2
DOIs
Publication statusPublished - May 1 2013

Fingerprint

Flexible electronics
integrated circuits
Integrated circuits
Cones
cones
ultrasonics
Ultrasonics
electronics
Plastic films
polymeric films
large scale integration
Electroless plating
electroplating
Electroplating
Photolithography
room temperature
photolithography
plating
Ethylene
counters

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ultrasonic bonding of cone bump for integration of large-scale integrated circuits in flexible electronics. / Shuto, Takanori; Iwanabe, Keiichiro; Noda, Kazuhiro; Nakai, Seiya; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Vol. 52, No. 5 PART 2, 05DB10, 01.05.2013.

Research output: Contribution to journalArticle

Shuto, Takanori ; Iwanabe, Keiichiro ; Noda, Kazuhiro ; Nakai, Seiya ; Asano, Tanemasa. / Ultrasonic bonding of cone bump for integration of large-scale integrated circuits in flexible electronics. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 5 PART 2.
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