Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives

Yuichiro Kawamura; Hidetoshi Yamamoto; Kenichi Goushi; Hiroyuki Sasabe; Chihaya Adachi; Hiroki Yoshizaki

doi:10.1063/1.1695091

Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives

Yuichiro Kawamura, Hidetoshi Yamamoto, Kenichi Goushi, Hiroyuki Sasabe, Chihaya Adachi, Hiroki Yoshizaki

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N₂ gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (k_f) i.e. larger k_f resulted in a larger ASE gain.

Original language	English
Pages (from-to)	2724-2726
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	15
DOIs	https://doi.org/10.1063/1.1695091
Publication status	Published - Apr 12 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1695091

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Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives. / Kawamura, Yuichiro; Yamamoto, Hidetoshi; Goushi, Kenichi; Sasabe, Hiroyuki; Adachi, Chihaya; Yoshizaki, Hiroki.

In: Applied Physics Letters, Vol. 84, No. 15, 12.04.2004, p. 2724-2726.

Research output: Contribution to journal › Article › peer-review

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abstract = "394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.",

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AU - Kawamura, Yuichiro

AU - Yamamoto, Hidetoshi

AU - Goushi, Kenichi

AU - Sasabe, Hiroyuki

AU - Adachi, Chihaya

AU - Yoshizaki, Hiroki

PY - 2004/4/12

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N2 - 394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.

AB - 394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.

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Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives

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