Abstract
394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.
Original language | English |
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Pages (from-to) | 2724-2726 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 15 |
DOIs | |
Publication status | Published - Apr 12 2004 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)