Abstract
394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.
| Original language | English |
|---|---|
| Pages (from-to) | 2724-2726 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Apr 12 2004 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives. / Kawamura, Yuichiro; Yamamoto, Hidetoshi; Goushi, Kenichi; Sasabe, Hiroyuki; Adachi, Chihaya; Yoshizaki, Hiroki.
In: Applied Physics Letters, Vol. 84, No. 15, 12.04.2004, p. 2724-2726.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ultraviolet amplified spontaneous emission from thin films of 4,4′-bis(9-carbazolyl)-2,2′-biphenyl and the derivatives
AU - Kawamura, Yuichiro
AU - Yamamoto, Hidetoshi
AU - Goushi, Kenichi
AU - Sasabe, Hiroyuki
AU - Adachi, Chihaya
AU - Yoshizaki, Hiroki
PY - 2004/4/12
Y1 - 2004/4/12
N2 - 394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.
AB - 394 nm ultraviolet amplified spontaneous emission (ASE) with a low pumping power threshold, from a thin film of an organic semiconductor 4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) is demonstrated. It is done under the pulse excitation of a N2 gas laser (337 nm). It is found that 3,6-dimethyl and 3-methyl substituted CBP derivatives also exhibited ASE in the deep-blue region of 406 and 401 nm. The results show that the ASE gain is correlated with the radiative decay rate (kf) i.e. larger kf resulted in a larger ASE gain.
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U2 - 10.1063/1.1695091
DO - 10.1063/1.1695091
M3 - Article
AN - SCOPUS:2342501875
VL - 84
SP - 2724
EP - 2726
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
ER -