Ultraviolet detectors based on (GaIn)2O3 films

Fabi Zhang, Haiou Li, Makoto Arita, Qixin Guo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrated a (GaIn)2O3 films based UV photodetector with a planar photoconductor structure, and investigated the photoresponse properties of the fabricated devices. The (GaIn)2O3 films are of ohmic contact with a Au/Ti electrode. The fabricated photodetectors show relatively high photoresponsivity of more than 0.1 A/W. The turn-on wavelength of the photodetectors varied from 285 to 315 nm with the increase of the indium content from 0.25 to 0.49. The properties of the films were also further investigated. The films are of a (-201) oriented monoclinic phase with a high transmittance of more than 90% in the visible region and smooth surfaces without phase separation. The absorption edges of the films shift toward a longer UV wavelength region with the increase of indium content. The above results suggest that wavelength selective UV detectors can be realized based on these films.

Original languageEnglish
Article number305235
JournalOptical Materials Express
Volume7
Issue number10
DOIs
Publication statusPublished - Jan 1 2017

Fingerprint

Ultraviolet detectors
Photodetectors
Indium
Wavelength
Photoconducting materials
Ohmic contacts
Phase separation
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Ultraviolet detectors based on (GaIn)2O3 films. / Zhang, Fabi; Li, Haiou; Arita, Makoto; Guo, Qixin.

In: Optical Materials Express, Vol. 7, No. 10, 305235, 01.01.2017.

Research output: Contribution to journalArticle

Zhang, Fabi ; Li, Haiou ; Arita, Makoto ; Guo, Qixin. / Ultraviolet detectors based on (GaIn)2O3 films. In: Optical Materials Express. 2017 ; Vol. 7, No. 10.
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