We demonstrated a (GaIn)2O3 films based UV photodetector with a planar photoconductor structure, and investigated the photoresponse properties of the fabricated devices. The (GaIn)2O3 films are of ohmic contact with a Au/Ti electrode. The fabricated photodetectors show relatively high photoresponsivity of more than 0.1 A/W. The turn-on wavelength of the photodetectors varied from 285 to 315 nm with the increase of the indium content from 0.25 to 0.49. The properties of the films were also further investigated. The films are of a (-201) oriented monoclinic phase with a high transmittance of more than 90% in the visible region and smooth surfaces without phase separation. The absorption edges of the films shift toward a longer UV wavelength region with the increase of indium content. The above results suggest that wavelength selective UV detectors can be realized based on these films.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials