Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film

Norihiro Tetsuyama, Koshi Fusazaki, Yasuaki Mizokami, Tetsuya Shimogaki, Mitsuhiro Higashihata, Daisuke Nakamura, Tatsuo Okada

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

Original languageEnglish
Pages (from-to)10026-10031
Number of pages6
JournalOptics Express
Volume22
Issue number8
DOIs
Publication statusPublished - Apr 21 2014

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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