Unconventional carrier generation mechanism at ferroelectric phase transitions

D. Matsumoto, S. Kaku, K. Nakamura, Yukio Watanabe

Research output: Contribution to journalArticle

Abstract

By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

Original languageEnglish
Pages (from-to)29-34
Number of pages6
JournalFerroelectrics
Volume400
Issue number1
DOIs
Publication statusPublished - Dec 1 2010

Fingerprint

Ferroelectric materials
Phase transitions
conduction
conductivity
time dependence
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Unconventional carrier generation mechanism at ferroelectric phase transitions. / Matsumoto, D.; Kaku, S.; Nakamura, K.; Watanabe, Yukio.

In: Ferroelectrics, Vol. 400, No. 1, 01.12.2010, p. 29-34.

Research output: Contribution to journalArticle

Matsumoto, D. ; Kaku, S. ; Nakamura, K. ; Watanabe, Yukio. / Unconventional carrier generation mechanism at ferroelectric phase transitions. In: Ferroelectrics. 2010 ; Vol. 400, No. 1. pp. 29-34.
@article{c2f7939588144c39bd34eb8672d46e0d,
title = "Unconventional carrier generation mechanism at ferroelectric phase transitions",
abstract = "By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.",
author = "D. Matsumoto and S. Kaku and K. Nakamura and Yukio Watanabe",
year = "2010",
month = "12",
day = "1",
doi = "10.1080/00150193.2010.505461",
language = "English",
volume = "400",
pages = "29--34",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

TY - JOUR

T1 - Unconventional carrier generation mechanism at ferroelectric phase transitions

AU - Matsumoto, D.

AU - Kaku, S.

AU - Nakamura, K.

AU - Watanabe, Yukio

PY - 2010/12/1

Y1 - 2010/12/1

N2 - By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

AB - By studying the time dependence of the current flowing through undoped BaTiO3, we have examined whether the conductivity peaking is due to a real conduction or to the fake current caused by ferroelectric domain switching. The difference (ΔQ) between integrated current at temperatures (388K and 400K) above and below TC exceeds the charge which can be released by domain switching. This result shows that conductivity peaking is indeed due to real conduction.

UR - http://www.scopus.com/inward/record.url?scp=78650873875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650873875&partnerID=8YFLogxK

U2 - 10.1080/00150193.2010.505461

DO - 10.1080/00150193.2010.505461

M3 - Article

AN - SCOPUS:78650873875

VL - 400

SP - 29

EP - 34

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1

ER -