Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa; Yuichi Harada; Eisuke Tokumitsu

doi:10.1063/1.4833755

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H₂. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 10³.

Original language	English
Article number	223503
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4833755
Publication status	Published - Nov 25 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4833755

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title = "Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions",

abstract = "To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.",

author = "Yuichi Nagahisa and Yuichi Harada and Eisuke Tokumitsu",

note = "Funding Information: This work was partly supported by a Grant-in Aid from the Japan Society for the Promotion of Science (JSPS) Fellows, the Grant No. 24·9115, and by the joint NTT research program. This work was also supported in part by a Grant-in-Aid for Exploratory Research from JSPS. We would like to express our thanks to Associate Professor Tetsuji Yano of Tokyo Institute of Technology for XPS measurements. ",

year = "2013",

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doi = "10.1063/1.4833755",

language = "English",

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journal = "Applied Physics Letters",

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AU - Nagahisa, Yuichi

AU - Harada, Yuichi

AU - Tokumitsu, Eisuke

N1 - Funding Information: This work was partly supported by a Grant-in Aid from the Japan Society for the Promotion of Science (JSPS) Fellows, the Grant No. 24·9115, and by the joint NTT research program. This work was also supported in part by a Grant-in-Aid for Exploratory Research from JSPS. We would like to express our thanks to Associate Professor Tetsuji Yano of Tokyo Institute of Technology for XPS measurements.

PY - 2013/11/25

Y1 - 2013/11/25

N2 - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.

AB - To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.

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Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

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