Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa; Yuichi Harada; Eisuke Tokumitsu

doi:10.1063/1.4833755

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

Yuichi Nagahisa, Yuichi Harada, Eisuke Tokumitsu

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H₂. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 10³.

Original language	English
Article number	223503
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4833755
Publication status	Published - Nov 25 2013
Externally published	Yes

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graphene

field effect transistors

annealing

vacuum

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Nagahisa, Y., Harada, Y., & Tokumitsu, E. (2013). Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. Applied Physics Letters, 103(22), [223503]. https://doi.org/10.1063/1.4833755

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. / Nagahisa, Yuichi; Harada, Yuichi; Tokumitsu, Eisuke.

In: Applied Physics Letters, Vol. 103, No. 22, 223503, 25.11.2013.

Research output: Contribution to journal › Article

Nagahisa, Y, Harada, Y & Tokumitsu, E 2013, 'Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions' Applied Physics Letters, vol. 103, no. 22, 223503. https://doi.org/10.1063/1.4833755

Nagahisa Y, Harada Y, Tokumitsu E. Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. Applied Physics Letters. 2013 Nov 25;103(22). 223503. https://doi.org/10.1063/1.4833755

Nagahisa, Yuichi ; Harada, Yuichi ; Tokumitsu, Eisuke. / Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. In: Applied Physics Letters. 2013 ; Vol. 103, No. 22.

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10.1063/1.4833755