Abstract
To realize graphene-channel field-effect-transistors (GFETs) with unipolar behavior and high on/off current ratios, we fabricated and characterized top-gate GFETs with n-type doped SiC (n-SiC) source/drain (S/D) regions on 4H-SiC(0001) substrates. 0-2 mono-layers (MLs) of graphene were grown on a monoatomic interfacial layer called zero-layer (ZL) by vacuum annealing. The 0-2 graphene MLs on the ZL were converted into 1-3 MLs of graphene without a ZL by annealing in H2. The GFETs with n-SiC S/D regions and 1-3 MLs of graphene without a ZL showed unipolar behavior with a high on/off current ratio of 2.7 × 103.
| Original language | English |
|---|---|
| Article number | 223503 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - Nov 25 2013 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Nagahisa, Y., Harada, Y., & Tokumitsu, E. (2013). Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions. Applied Physics Letters, 103(22), [223503]. https://doi.org/10.1063/1.4833755