Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Tomoji Kawai

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

The resistive switching characteristics of room temperature grown SnO2 films were investigated by fabricating the metal-oxide-metal sandwich structures. The unipolar operation was found in all devices. Experiments, including the size and material dependencies of the top electrodes and the three terminal device structures, demonstrated the rupture and formation of conducting filaments near the anode. The Ohmic behavior was observed in both on- and off-states when using Au and Ti top electrodes, whereas the Schottky behavior was only found in the off-state for Pt. The analysis on the transport properties indicates the presence of insulative crystalline SnO2 near the anode in the off-state.

Original languageEnglish
Article number242902
JournalApplied Physics Letters
Volume94
Issue number24
DOIs
Publication statusPublished - Jun 29 2009
Externally publishedYes

Fingerprint

anodes
electrodes
sandwich structures
room temperature
thin films
metal oxides
filaments
transport properties
conduction
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films. / Nagashima, Kazuki; Yanagida, Takeshi; Oka, Keisuke; Kawai, Tomoji.

In: Applied Physics Letters, Vol. 94, No. 24, 242902, 29.06.2009.

Research output: Contribution to journalArticle

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