Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Kazuki Nagashima; Takeshi Yanagida; Keisuke Oka; Tomoji Kawai

doi:10.1063/1.3156863

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Kazuki Nagashima, Takeshi Yanagida, Keisuke Oka, Tomoji Kawai

Research output: Contribution to journal › Article › peer-review

96 Citations (Scopus)

Abstract

The resistive switching characteristics of room temperature grown SnO2 films were investigated by fabricating the metal-oxide-metal sandwich structures. The unipolar operation was found in all devices. Experiments, including the size and material dependencies of the top electrodes and the three terminal device structures, demonstrated the rupture and formation of conducting filaments near the anode. The Ohmic behavior was observed in both on- and off-states when using Au and Ti top electrodes, whereas the Schottky behavior was only found in the off-state for Pt. The analysis on the transport properties indicates the presence of insulative crystalline SnO2 near the anode in the off-state.

Original language	English
Article number	242902
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3156863
Publication status	Published - 2009
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3156863

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title = "Unipolar resistive switching characteristics of room temperature grown SnO2 thin films",

abstract = "The resistive switching characteristics of room temperature grown SnO2 films were investigated by fabricating the metal-oxide-metal sandwich structures. The unipolar operation was found in all devices. Experiments, including the size and material dependencies of the top electrodes and the three terminal device structures, demonstrated the rupture and formation of conducting filaments near the anode. The Ohmic behavior was observed in both on- and off-states when using Au and Ti top electrodes, whereas the Schottky behavior was only found in the off-state for Pt. The analysis on the transport properties indicates the presence of insulative crystalline SnO2 near the anode in the off-state.",

author = "Kazuki Nagashima and Takeshi Yanagida and Keisuke Oka and Tomoji Kawai",

note = "Funding Information: This work is partially funded by SCOPE.",

year = "2009",

doi = "10.1063/1.3156863",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Oka, Keisuke

AU - Kawai, Tomoji

N1 - Funding Information: This work is partially funded by SCOPE.

PY - 2009

Y1 - 2009

N2 - The resistive switching characteristics of room temperature grown SnO2 films were investigated by fabricating the metal-oxide-metal sandwich structures. The unipolar operation was found in all devices. Experiments, including the size and material dependencies of the top electrodes and the three terminal device structures, demonstrated the rupture and formation of conducting filaments near the anode. The Ohmic behavior was observed in both on- and off-states when using Au and Ti top electrodes, whereas the Schottky behavior was only found in the off-state for Pt. The analysis on the transport properties indicates the presence of insulative crystalline SnO2 near the anode in the off-state.

AB - The resistive switching characteristics of room temperature grown SnO2 films were investigated by fabricating the metal-oxide-metal sandwich structures. The unipolar operation was found in all devices. Experiments, including the size and material dependencies of the top electrodes and the three terminal device structures, demonstrated the rupture and formation of conducting filaments near the anode. The Ohmic behavior was observed in both on- and off-states when using Au and Ti top electrodes, whereas the Schottky behavior was only found in the off-state for Pt. The analysis on the transport properties indicates the presence of insulative crystalline SnO2 near the anode in the off-state.

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DO - 10.1063/1.3156863

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Abstract

All Science Journal Classification (ASJC) codes

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