Abstract
The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 442-449 |
| Number of pages | 8 |
| Journal | Journal of Crystal Growth |
| Volume | 180 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - Jan 1 1997 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Use of an inhomogeneous magnetic field for silicon crystal growth. / Kakimoto, Koichi; Eguchi, M.; Ozoe, H.
In: Journal of Crystal Growth, Vol. 180, No. 3-4, 01.01.1997, p. 442-449.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Use of an inhomogeneous magnetic field for silicon crystal growth
AU - Kakimoto, Koichi
AU - Eguchi, M.
AU - Ozoe, H.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.
AB - The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.
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U2 - 10.1016/S0022-0248(97)00239-X
DO - 10.1016/S0022-0248(97)00239-X
M3 - Article
AN - SCOPUS:0031249576
VL - 180
SP - 442
EP - 449
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -