Abstract
The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.
| Original language | English |
|---|---|
| Pages (from-to) | 442-449 |
| Number of pages | 8 |
| Journal | Journal of Crystal Growth |
| Volume | 180 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - Oct 1997 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry