Use of an inhomogeneous magnetic field for silicon crystal growth

Koichi Kakimoto, M. Eguchi, H. Ozoe

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The flow of liquid silicon and oxygen transfer during crystal growth under three different types of cusp-shaped magnetic field were clarified using numerical simulation, flow visualization, and infrared measurement of oxygen concentration in grown crystals. Velocity vectors obtained from numerical simulation are almost parallel to cusp-shaped magnetic fields since flow parallel to a magnetic field does not produce a Lorentz force. This parallel flow enhances homogenization of oxygen concentration along the radial direction in grown crystals. Cusp-shaped magnetic fields can control the flow velocity at the top of the melt. Since melt with a low concentration of oxygen at the top of the melt transfers directly from the free surface to the solid-liquid interface, a low concentration of oxygen in crystals can be achieved. Separation of fluid flow between the near surface and bulk can produce a spatial distribution of the concentration in the melt, and therefore a low oxygen concentration can be obtained in grown crystals.

Original languageEnglish
Pages (from-to)442-449
Number of pages8
JournalJournal of Crystal Growth
Volume180
Issue number3-4
DOIs
Publication statusPublished - Jan 1 1997

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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