Use of magnetic fields in crystal growth from semiconductor melts

Koichi Kakimoto, Kyung Woo Yi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The three-dimensional pattern of a molten silicon flow under a magnetic field was revealed by X-ray radiography and large-scale three-dimensional numerical simulation. A flow visualization technique using X-ray radiography and a three-dimensional numerical simulation governed by a magneto-hydrodynamic equation revealed the pattern of the flow to be axisymmetric and under a low magnetic field, whereas the pattern becomes non-axisymmetric and three-dimensional under a high magnetic field even if an axisymmetric temperature boundary condition was applied. The result leads us to understand that the asymmetry originates in the intrinsic instability.

Original languageEnglish
Pages (from-to)406-408
Number of pages3
JournalPhysica B: Condensed Matter
Volume216
Issue number3-4
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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