Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

Toshinori Matsushima, Atula S.D. Sandanayaka, Yu Esaki, Chihaya Adachi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Original languageEnglish
Article number14547
JournalScientific reports
Volume5
DOIs
Publication statusPublished - Sep 29 2015

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organic semiconductors
hot isostatic pressing
field effect transistors
vacuum
fabrication
hole mobility
continuity
crystallites
amorphous silicon
manufacturing
electrodes

All Science Journal Classification (ASJC) codes

  • General

Cite this

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors. / Matsushima, Toshinori; Sandanayaka, Atula S.D.; Esaki, Yu; Adachi, Chihaya.

In: Scientific reports, Vol. 5, 14547, 29.09.2015.

Research output: Contribution to journalArticle

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