TY - JOUR
T1 - Vanadium-free colusites Cu26A2Sn6S32 (A = Nb, Ta) for environmentally friendly thermoelectrics
AU - Kikuchi, Yuta
AU - Bouyrie, Yohan
AU - Ohta, Michihiro
AU - Suekuni, Koichiro
AU - Aihara, Makoto
AU - Takabatake, Toshiro
N1 - Funding Information:
This work at AIST was supported by JSPS KAKENHI Grant Number 25420699.
Publisher Copyright:
© The Royal Society of Chemistry 2016.
PY - 2016
Y1 - 2016
N2 - The thermoelectric properties of colusites Cu26A2Sn6S32 with A = V, Nb, and Ta have been investigated on high-density sintered compacts over the temperature range of 300-670 K. The ingots melted in evacuated and sealed quartz tubes were found to be composed of two colusite phases with slightly different lattice parameters. The successive hot-pressing converted the two-phase samples to single-phase ones of high density. Scanning electron microscopic analysis revealed the presence of CuS- and Cu2S-based secondary phases in only the sintered compact with A = Ta. For A = V, Nb, and Ta samples, the heavy hole effective mass of 3m0-4m0 (m0: free electron mass) caused a high Seebeck coefficient, leading to a high thermoelectric power factor of 0.6-0.7 mW K-2 m-1 at 660 K. The electrical resistivity and lattice thermal conductivity for the A = Ta sample are lower than those for A = V and A = Nb samples, because the secondary phases in the A = Ta sample provide charge carriers and scatter effectively the phonons. As a result, a ZT of 0.8 at 670 K is achieved for the A = Ta system.
AB - The thermoelectric properties of colusites Cu26A2Sn6S32 with A = V, Nb, and Ta have been investigated on high-density sintered compacts over the temperature range of 300-670 K. The ingots melted in evacuated and sealed quartz tubes were found to be composed of two colusite phases with slightly different lattice parameters. The successive hot-pressing converted the two-phase samples to single-phase ones of high density. Scanning electron microscopic analysis revealed the presence of CuS- and Cu2S-based secondary phases in only the sintered compact with A = Ta. For A = V, Nb, and Ta samples, the heavy hole effective mass of 3m0-4m0 (m0: free electron mass) caused a high Seebeck coefficient, leading to a high thermoelectric power factor of 0.6-0.7 mW K-2 m-1 at 660 K. The electrical resistivity and lattice thermal conductivity for the A = Ta sample are lower than those for A = V and A = Nb samples, because the secondary phases in the A = Ta sample provide charge carriers and scatter effectively the phonons. As a result, a ZT of 0.8 at 670 K is achieved for the A = Ta system.
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U2 - 10.1039/c6ta05945g
DO - 10.1039/c6ta05945g
M3 - Article
AN - SCOPUS:84990200413
SN - 2050-7488
VL - 4
SP - 15207
EP - 15214
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 39
ER -