Vanadium-related deep levels in n-silicon detected by junction capacitance waveform analysis

Hisatsugu Kawahara, Yoichi Okamoto, Kenichiro Tahira, Jun Morimoto, Toru Miyakawa, Hiroshi Nakashima

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Multiexponential (ME-) and spectral analysis (SA-) Deep Level Transient Spectroscopy (DLTS) are made on vanadium-related deep levels in n-silicon. We resolved three traps with large amplitude and three more traps with comparatively small amplitude, VA (ΔE = 0.08eV, σ = 3.2 × 10–18 cm2), VB (ΔE = 0.28eV, σ = 2.6 × 10–14 cm2) and VC (ΔE = 0.24eV, σ = 8.4 × 10–18 cm2). These vanadium-related levels do not have appreciable broadening of the emission rate spectrum.

    Original languageEnglish
    Pages (from-to)87-88
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume31
    Issue number1 R
    DOIs
    Publication statusPublished - Jan 1992

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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