We have fabricated a vertical quantum dot with lateral coupling, modulated by a split gate voltage, to a two-dimensional electron. We thereby control not only electron configurations but also the strength of coupling between the dot and the lateral lead, by applying gate voltages. We have measured the conductance enhancement when the applied bias exceeds the single-electron excitation energy, in the Coulomb blockade regime. This conductance enhancement disappears as the split gate voltage decreases (reducing the coupling). This indicates that this enhancement is caused by inelastic co-tunneling. Furthermore, we observed a conductance enhancement at zero source-drain bias with stronger coupling. An anomaly is observed that we attribute to Kondo resonance between the dot and the leads.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering