Variation of photoluminescence properties of stain-etched si with crystallinity of starting polycrystalline Si films

Katsuya Higa, Tanemasa Asano, Tatsuro Miyasato

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have studied the relationship between the photoluminescence property and crystallinity of stain-etched polycrystalline Si (poly-Si) films. Poly-Si films having different crystallite size were prepared on SiO2 by electron beam evaporation of amorphous Si with subsequent annealing in the temperature range of 600–900° C. Porous Si layers were formed by stain etching of these poly-Si films. It has been found that the size of nanocrystallites in the porous Si layer is independent of the crystallite size of poly-Si and appears to be almost a constant value (about 5 nm). However, the photoluminescence peak wavelength became shorter as the crystallite size in the poly-Si films before stain-etching was increased, and the photoluminescence intensity became stronger as the density of crystallites in stain-etched poly-Si films was increased.

Original languageEnglish
Pages (from-to)L1733-L1736
JournalJapanese Journal of Applied Physics
Volume33
Issue number12B
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

crystallinity
Photoluminescence
photoluminescence
Crystallite size
Etching
etching
Nanocrystallites
Crystallites
Polysilicon
crystallites
Electron beams
Evaporation
evaporation
electron beams
Annealing
Wavelength
annealing
wavelengths
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Variation of photoluminescence properties of stain-etched si with crystallinity of starting polycrystalline Si films. / Higa, Katsuya; Asano, Tanemasa; Miyasato, Tatsuro.

In: Japanese Journal of Applied Physics, Vol. 33, No. 12B, 1994, p. L1733-L1736.

Research output: Contribution to journalArticle

Higa, Katsuya ; Asano, Tanemasa ; Miyasato, Tatsuro. / Variation of photoluminescence properties of stain-etched si with crystallinity of starting polycrystalline Si films. In: Japanese Journal of Applied Physics. 1994 ; Vol. 33, No. 12B. pp. L1733-L1736.
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