Variation of photoluminescence properties of stain-etched si with crystallinity of starting polycrystalline Si films

Katsuya Higa, Tanemasa Asano, Tatsuro Miyasato

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5 Citations (Scopus)

Abstract

We have studied the relationship between the photoluminescence property and crystallinity of stain-etched polycrystalline Si (poly-Si) films. Poly-Si films having different crystallite size were prepared on SiO2 by electron beam evaporation of amorphous Si with subsequent annealing in the temperature range of 600–900° C. Porous Si layers were formed by stain etching of these poly-Si films. It has been found that the size of nanocrystallites in the porous Si layer is independent of the crystallite size of poly-Si and appears to be almost a constant value (about 5 nm). However, the photoluminescence peak wavelength became shorter as the crystallite size in the poly-Si films before stain-etching was increased, and the photoluminescence intensity became stronger as the density of crystallites in stain-etched poly-Si films was increased.

Original languageEnglish
Pages (from-to)L1733-L1736
JournalJapanese Journal of Applied Physics
Volume33
Issue number12B
DOIs
Publication statusPublished - 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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