Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma

Katsuhiko Furukawa, Dawei Gao, Hiroshi Nakashima, Hidenobu Ijiri, Kiichiro Uchino, Katsunori Muraoka

Research output: Contribution to journalConference article

Abstract

We have succeeded in preparing thin Si oxide films having a thickness of 9 nm and a breakdown field greater than 8 MV/cm at low temperatures. These films were prepared by a method of combining plasma preoxidation and subsequent sputter deposition using a sputtering-type ECR plasma system. In this study, the effect of the initial plasma preoxidation process was verified by comparing the structural characteristics of the films with and without this process. The chemical etch rate measurements and X-ray photoelectron spectroscopy suggested that well-controlled film structure in the range of 1.3-3 nm from Si substrates was of primary importance for the high breakdown characteristics of the films prepared with the combined method.

Original languageEnglish
Pages (from-to)128-131
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume72
Issue number2
DOIs
Publication statusPublished - Mar 15 2000
EventThe International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices - Beijing, China
Duration: Jun 13 1999Jun 18 1999

Fingerprint

Silicon oxides
silicon oxides
Oxide films
Sputtering
oxide films
sputtering
Microwaves
Plasmas
microwaves
breakdown
Temperature
Sputter deposition
X ray photoelectron spectroscopy
photoelectron spectroscopy
Substrates
x rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We have succeeded in preparing thin Si oxide films having a thickness of 9 nm and a breakdown field greater than 8 MV/cm at low temperatures. These films were prepared by a method of combining plasma preoxidation and subsequent sputter deposition using a sputtering-type ECR plasma system. In this study, the effect of the initial plasma preoxidation process was verified by comparing the structural characteristics of the films with and without this process. The chemical etch rate measurements and X-ray photoelectron spectroscopy suggested that well-controlled film structure in the range of 1.3-3 nm from Si substrates was of primary importance for the high breakdown characteristics of the films prepared with the combined method.",
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T1 - Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma

AU - Furukawa, Katsuhiko

AU - Gao, Dawei

AU - Nakashima, Hiroshi

AU - Ijiri, Hidenobu

AU - Uchino, Kiichiro

AU - Muraoka, Katsunori

PY - 2000/3/15

Y1 - 2000/3/15

N2 - We have succeeded in preparing thin Si oxide films having a thickness of 9 nm and a breakdown field greater than 8 MV/cm at low temperatures. These films were prepared by a method of combining plasma preoxidation and subsequent sputter deposition using a sputtering-type ECR plasma system. In this study, the effect of the initial plasma preoxidation process was verified by comparing the structural characteristics of the films with and without this process. The chemical etch rate measurements and X-ray photoelectron spectroscopy suggested that well-controlled film structure in the range of 1.3-3 nm from Si substrates was of primary importance for the high breakdown characteristics of the films prepared with the combined method.

AB - We have succeeded in preparing thin Si oxide films having a thickness of 9 nm and a breakdown field greater than 8 MV/cm at low temperatures. These films were prepared by a method of combining plasma preoxidation and subsequent sputter deposition using a sputtering-type ECR plasma system. In this study, the effect of the initial plasma preoxidation process was verified by comparing the structural characteristics of the films with and without this process. The chemical etch rate measurements and X-ray photoelectron spectroscopy suggested that well-controlled film structure in the range of 1.3-3 nm from Si substrates was of primary importance for the high breakdown characteristics of the films prepared with the combined method.

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