Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The injection enhancement effect in IGBTs was experimentally verified by separately measuring emitter electron-and hole-currents for the first time. Finger contacts were employed as ladder-like periodic n+ and p+ emitters to allow the independent measurement of these currents. Both reducing the mesa width and increasing the cell pitch were found to increase electron injection from the emitter, demonstrating the injection enhancement effect. These experimental results agreed well with the simulation results.

Original languageEnglish
Title of host publication2018 48th European Solid-State Device Research Conference, ESSDERC 2018
PublisherEditions Frontieres
Pages26-29
Number of pages4
ISBN (Electronic)9781538654019
DOIs
Publication statusPublished - Oct 8 2018
Event48th European Solid-State Device Research Conference, ESSDERC 2018 - Dresden, Germany
Duration: Sep 3 2018Sep 6 2018

Publication series

NameEuropean Solid-State Device Research Conference
Volume2018-September
ISSN (Print)1930-8876

Other

Other48th European Solid-State Device Research Conference, ESSDERC 2018
CountryGermany
CityDresden
Period9/3/189/6/18

Fingerprint

Electron injection
Insulated gate bipolar transistors (IGBT)
Ladders
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., ... Lwai, H. (2018). Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 (pp. 26-29). [8486870] (European Solid-State Device Research Conference; Vol. 2018-September). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2018.8486870

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. / Hoshii, T.; Furukawa, K.; Kakushima, K.; Watanabe, M.; Shigvo, N.; Saraya, T.; Takakura, T.; Ltou, K.; Fukui, M.; Suzuki, S.; Takeuchi, K.; Muneta, I.; Wakabayashi, H.; Nishizawa, Shinichi; Tsutsui, K.; Hiramoto, T.; Ohashi, H.; Lwai, H.

2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, 2018. p. 26-29 8486870 (European Solid-State Device Research Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hoshii, T, Furukawa, K, Kakushima, K, Watanabe, M, Shigvo, N, Saraya, T, Takakura, T, Ltou, K, Fukui, M, Suzuki, S, Takeuchi, K, Muneta, I, Wakabayashi, H, Nishizawa, S, Tsutsui, K, Hiramoto, T, Ohashi, H & Lwai, H 2018, Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. in 2018 48th European Solid-State Device Research Conference, ESSDERC 2018., 8486870, European Solid-State Device Research Conference, vol. 2018-September, Editions Frontieres, pp. 26-29, 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, 9/3/18. https://doi.org/10.1109/ESSDERC.2018.8486870
Hoshii T, Furukawa K, Kakushima K, Watanabe M, Shigvo N, Saraya T et al. Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres. 2018. p. 26-29. 8486870. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2018.8486870
Hoshii, T. ; Furukawa, K. ; Kakushima, K. ; Watanabe, M. ; Shigvo, N. ; Saraya, T. ; Takakura, T. ; Ltou, K. ; Fukui, M. ; Suzuki, S. ; Takeuchi, K. ; Muneta, I. ; Wakabayashi, H. ; Nishizawa, Shinichi ; Tsutsui, K. ; Hiramoto, T. ; Ohashi, H. ; Lwai, H. / Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately. 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, 2018. pp. 26-29 (European Solid-State Device Research Conference).
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